Method of forming micropattern, die formed by this method of forming micropattern, transfer method and micropattern forming method using this die

ABSTRACT

A micropattern is joined to a substrate (W 1 ) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

This application is a divisional of U.S. application Ser. No. 12/530,134filed Oct. 23, 2009, which claims priority to International PatentApplication No. PCT/JP2008/054082 filed Mar. 6, 2008, now WO 2008/108441A1, published on Sep. 9, 2008. The entirety of all of the above-listedApplications are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a micropattern forming method and thelike, and more specifically relates to a method of continuously forming,on a substrate and the like, micropatterns similar to a transfermicropattern formed on a mold.

BACKGROUND ART

In recent years, there have been carried out research and development ona nanoimprint technique of preparing a mold (template or stamper) byforming a transfer ultra micropattern on a quartz substrate or the likeby use of electron lithography or the like and pressing the mold with apredetermined pressure against a resist film (for example, a resist filmmade of a UV curable resin or a thermoplastic resin) formed on asubstrate surface to be subjected to the transfer (a surface of asubstrate) as an to-be-molded object, thereby transferring the transferpattern formed on the mold. Such a technique is disclosed in thefollowing document: Precision Engineering Journal of the InternationalSocieties for Precision Engineering and Nanotechnology 25 (2001) 192-199(Document 1).

With reference to FIG. 24 (showing a conventional transfer method), aconventional technique will be described in detail by giving examples.

In the conventional transfer, a transfer micropattern formed on a die(mold) 101 made of, for example, quartz glass is pressed onto asubstrate 105 coated with a UV curable resin (resist layer) 103, forexample, and the resin 103 is cured by UV light irradiation (see FIGS.24( a) and 24(b)). Thereafter, the die is released and a remaining film107 is removed (see FIGS. 24( c) and 24(d)) and etching is performed(see FIG. 24( d)). Thus, a micropattern shape on the die 101, which iscopied onto the resin 103, is transferred onto the substrate 105 (seeFIG. 24( e)).

Incidentally, in the case of forming a transfer ultra micropattern on adie such as a quartz substrate by use of electron lithography or thelike, when a portion where a transfer micropattern is to be formed has alarge area, die preparation (formation of a micropattern on the die)takes a long time. An apparatus for executing the electron lithographyor the like has a high man-hour cost (a cost per unit time for using theapparatus), which increases the price of the die.

Moreover, a material cost for a material such as quartz glass used asthe material of the die is also high. Thus, when the portion where thetransfer micropattern is formed his a large area, the die itself isincreased in size, which increases the price of the die.

In this regard, the following method has been heretofore known.Specifically, when the micropattern formed on the substrate 105 has aform in which the same pattern is repeated, for example, a transfermicropattern is formed on a surface of a relatively small die.Thereafter, the transfer micropatterns are continuously transferred ontothe resist layer 103 provided on the substrate 105. Thus, a continuousmicropattern is formed on a large area of the substrate 105 in the samemanner as the case shown in FIG. 24. The above method for forming thecontinuous micropattern is disclosed in Japanese Patent ApplicationPublication No. 2006-191089 (Document 2), for example.

Incidentally, in the case of forming the continuous micropattern on alarge area of the substrate by connecting the transfer micropatterns asdescribed above, the resist layer swells up due to a first transfer, forexample. Thus, there is a possibility that a second transfer continuouswith the first transfer is not accurately executed.

The above situation will be described in detail by using FIG. 25(showing a conventional transfer state). By performing a first transferusing a die M20 (101), a micropattern P11 is formed on a resist layerW21 (103). In this event, together with the micropattern P11, a swellingpart W22 and the like of the resist layer W21 are formed around themicropattern F11.

In the case of attempting to form a micropattern to be connected to themicropattern P11 in a portion P12 of the resist layer W21 by a secondtransfer using the die M20, a shape of an end of the micropattern P11 ora shape of an end (end on the micropattern P11 side) of the micropatternformed in the portion. P12, in other words, shapes of the micropatternsat a connection between the micropattern P11 and the micropattern formedin the portion P12 is deformed by the swelling part W22. Thus, there isa possibility that an accurate micropattern cannot be formed on theresist layer W21.

For example, in the state shown in FIG. 25, when the die M20 is loweredto form a micropattern in the portion P12 of the resist layer W21, theresist layer in the swelling part W22 existing below the die M20 hasnowhere to go and thus may enter into a minute concave portion existingat the end (end on the portion P12 side) of the micropattern P11.

When an accurate micropattern cannot be formed on the resist layer W21,there is a problem that a form of a micropattern to be formed on asubstrate W20 (a micropattern corresponding to the micropattern formedon the substrate 105 in FIG. 24( e); a micropattern formed by etching)also becomes inaccurate.

The present invention was made in consideration of the above problems.It is an object of the present invention to provide a micropatternforming method for continuously forming micropatterns on a substrate,the micropatterns each corresponding to a transfer micropattern formedon a mold, the method being capable of forming micropatterns having anaccurate form on the substrate.

DISCLOSURE OF THE INVENTION

A first aspect of the present invention is a micropattern forming methodfor continuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold, themicropattern forming method including: a first covering step of coveringa surface of the substrate with a film of a transfer material; a firsttransfer step of transferring the transfer micropattern onto thetransfer material formed in the first covering step by pressing the moldagainst the substrate having the film of the transfer material providedon its surface by the first covering step; a first micropattern formingstep of forming a micropattern on the substrate by etching after thetransfer of the micropattern by the first transfer step, themicropattern corresponding to the transfer micropattern on the mold; afirst removal step of removing the transfer material provided in thefirst covering step after the formation of the micropattern by the firstmicropattern forming step; a second covering step of covering surfaceportions of the substrate with a film of the transfer material after theremoval of the transfer material in the first removal step; a secondtransfer step of transferring the transfer micropattern onto thetransfer material formed in the second covering step by pressing a moldagainst the substrate having the film of the transfer material providedon its surface by the second covering step; a second micropatternforming step of forming a micropattern on the substrate by etching afterthe transfer of the micropattern by the second transfer step, themicropattern corresponding to the transfer micropattern on the mold; anda second removal step of removing the transfer material provided in thesecond covering step after the formation of the micropattern by thesecond micropattern forming step.

A second aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a first covering stepof covering a surface of a lower transfer material in a substrate with afilm of an upper transfer material, the substrate having its surfacecovered with a film of the lower transfer material; a first transferstep of transferring the transfer micropattern onto the upper transfermaterial formed in the first covering step by pressing the mold againstthe substrate having the film of the upper transfer material provided onits surface by the first covering step; a first micropattern formingstep of forming a micropattern on the lower transfer material by etchingafter the transfer of the micropattern by the first transfer step, themicropattern corresponding to the transfer micropattern on the mold; afirst removal step of removing the upper transfer material provided inthe first covering step after the formation of the micropattern by thefirst micropattern forming step; a second covering step of covering thesurface of the lower transfer material with a film of the upper transfermaterial after the removal of the upper transfer material in the firstremoval step; a second transfer step of transferring the transfermicropattern onto the upper transfer material formed in the secondcovering step by pressing a mold against the substrate having the filmof the upper transfer material provided on its surface by the secondcovering step; a second micropattern forming step of forming amicropattern on the lower transfer material by etching after thetransfer of the micropattern by the second transfer step, themicropattern corresponding to the transfer micropattern on the mold; asecond removal step of removing the upper transfer material provided inthe second covering step after the formation of the micropattern by thesecond micropattern forming step; a third micropattern forming step offorming the micropattern on the substrate by etching after the removalof the upper transfer material in the second removal step, themicropattern corresponding to the micropattern on the lower transfermaterial; and a third removal step of removing the lower transfermaterial after the formation of the micropattern by the thirdmicropattern forming step.

A third aspect of the present invention is a micropattern forming methodfor continuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold, themicropattern forming method including: a first covering step of coveringa surface of a third material in the substrate with a film of a transfermaterial, the substrate being formed by stacking a first material, afilm-like second material and a film-like third material; a firsttransfer step of transferring the transfer micropattern onto thetransfer material formed in the first covering step by pressing the moldagainst the substrate having the film of the transfer material providedon its surface by the first covering step; a first micropattern formingstep of forming a micropattern on the third material by etching afterthe transfer of the micropattern by the first transfer step, themicropattern corresponding to the transfer micropattern on the mold; afirst removal step of removing the transfer material provided in thefirst covering step after the formation of the micropattern by the firstmicropattern forming step; a second covering step of covering thesurface of the third material with a film of the transfer material afterthe removal of the transfer material in the first removal step; a secondtransfer step of transferring the transfer micropattern onto thetransfer material formed in the second covering step by pressing a moldagainst the substrate having the film of the transfer material providedon its surface by the second covering step; a second micropatternforming step of forming a micropattern on the third material by etchingafter the transfer of the micropattern by the second transfer step, themicropattern corresponding to the transfer micropattern on the mold; anda second removal step of removing the transfer material provided in thesecond covering step after the formation of the micropattern by thesecond micropattern forming step.

A fourth aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a first covering stepof covering a surface of the substrate with a film of a transfermaterial; a first transfer step of transferring the transfermicropattern onto the transfer material formed in the first coveringstep by pressing the mold against the substrate having the film of thetransfer material provided on its surface by the first covering step; afirst provision step of providing a covering member in a portion wherethe substrate is exposed by the transfer of the transfer micropattern inthe first transfer step; a first removal step of removing the transfermaterial provided in the first covering step after covering the portionwhere the substrate is exposed with the covering member in the firstprovision step; a second covering step of covering surface portions ofthe substrate with a film of the transfer material after the removal ofthe transfer material in the first removal step; a second transfer stepof transferring the transfer micropattern onto the transfer materialformed in the second covering step by pressing a mold against thesubstrate having the film of the transfer material provided on itssurface by the second covering step; a second provision step of coveringa portion where the substrate is exposed by the transfer of the transfermicropattern in the second transfer step with a covering member; asecond removal step of removing the transfer material provided in thesecond covering step after covering the portion where the substrate isexposed with the covering member in the second provision step; amicropattern forming step of forming a micropattern on the substrate byetching after the removal of the transfer material by the second removalstep, the micropattern corresponding to the transfer micropattern on themold; and a third removal step of removing the covering members providedin the first and second provision steps after the formation of themicropattern by the micropattern forming step.

A fifth aspect of the present invention is the micropattern formingmethod according to any one of the first to fourth aspects, furtherincluding: a positional relationship detecting step of detecting apositional relationship between the micropattern formed in the firstmicropattern forming step and the transfer micropattern formed on themold after the micropattern is formed in the first micropattern formingstep and before the transfer is performed in the second transfer step;and a correction step of correcting a position of the mold relative tothe substrate on the basis of a result of the detection in thepositional relationship detecting step, so that the transfermicropattern to be formed in the second micropattern forming step isaccurately connected to the micropattern formed in the firstmicropattern forming step.

A sixth aspect of the present invention is the micropattern formingmethod according to the fifth aspect, in which the correction step is astep of performing the correction by compensating a change in shape ofthe mold to an accurate shape by using an actuator.

A seventh aspect of the present invention is the micropattern formingmethod according to the fifth aspect, in which, by the first transferstep and the first micropattern forming step, micropatterns are formedin a first portion of the transfer material and in a second portion awayfrom the first portion by a predetermined distance; by the secondtransfer step and the second micropattern forming step, a micropatternis formed in a third portion connecting the first and second portions;and the positional relationship detecting step is a step of detecting apositional relationship between the micropattern formed in the firstmicropattern forming step and the transfer micropattern formed on themold by detecting a relative positional deviation amount of the transfermicropattern on the mold at a boundary between the first portion and thetransfer micropattern formed on the mold and by detecting a relativepositional deviation amount of the transfer micropattern on the mold ata boundary between the second portion and the transfer micropatternformed on the mold.

A eighth aspect of the present invention is the micropattern formingmethod according to the seventh aspect of the present invention, inwhich a portion of the mold having the transfer micropattern formedtherein is formed to have a rectangular planar shape; by arranging thefirst portion, the third portion and the second portion in a straightline, a micropattern is formed within a rectangular area; the positionalrelationship detecting step is a step of detecting, on one side in awidth direction of the rectangular micropattern, a positional deviationamount of the transfer micropattern on the mold relative to the firstportion at the boundary between the first portion and the transfermicropattern formed on the mold and a positional deviation amount of thetransfer micropattern on the mold relative to the second portion at theboundary between the second portion and the transfer micropattern formedon the mold, and of detecting, on the other side in the width directionof the rectangular micropattern, a positional deviation amount of thetransfer micropattern on the mold relative to the first portion at theboundary between the first portion and the transfer micropattern formedon the mold; and the correction step is a step of performing thecorrection by compensating the dimension of the mold in the widthdirection by changing an elastic deformation amount of the mold in thewidth direction of the rectangular micropattern by using an actuator onthe basis of the positional deviation amount on the other side in thewidth direction.

A ninth aspect of the present invention is a die manufactured byelectroforming using a substrate including a micropattern formed byusing the micropattern forming method according to any one of the firstto fourth aspects.

A tenth aspect of the present invention is a mold formed by use of asubstrate including a micropattern formed by using the micropatternforming method according to any one of the first to fourth aspects, inwhich a portion of the mold having the micropattern formed therein isformed to be long by performing the transfer steps and the micropatternforming steps in alignment with each other.

An eleventh aspect of the present invention is a transfer method oftransferring the micropattern on the die according to the tenth aspectonto an to-be-molded object, in which the portion of the die having themicropattern formed therein is formed into a convex surface shape formedby using a part of a lateral surface of a cylinder in such a manner thata longitudinal direction of the portion is set as a circumferentialdirection of the cylinder, or the portion of the die having themicropattern formed therein is formed into a convex surface shape formedby using a part of a lateral surface of an elliptic cylinder in such amanner that the longitudinal direction of the portion is set as acircumferential direction of the elliptic cylinder, and the transfer isperformed while moving a linear pressing portion of the convex surfaceagainst the to-be-molded object from one end to the other end of theconvex surface.

A twelfth aspect of the present invention is the transfer methodaccording to the eleventh aspect, in which, after the first transfer isperformed, the die is moved in a width direction of the micropattern onthe die relative to the to-be-molded object, and, by performing a secondtransfer in the transfer method according to the ninth aspect, themicropattern on the die is transferred onto the to-be-molded object in amanner connected in the width direction.

A thirteenth aspect of the present invention is a micropattern formingmethod for continuously forming a micropatterns on the to-be-moldedobject, each micropattern corresponding to the micropattern formed onthe die according to the tenth aspect, the method including: a first(third) covering step of covering a surface of the to-be-molded objectwith a film of a transfer material; a first (fourth) transfer step oftransferring the transfer micropattern onto the transfer material formedin the first (third) covering step by pressing the die against theto-be-molded object having the film of the transfer material provided onits surface by the first (third) covering step; a first (third orfourth) micropattern forming step of forming a micropattern on theto-be-molded object by etching after the transfer of the micropattern bythe first (fourth) transfer step, the micropattern corresponding to thetransfer micropattern on the die; a first (third or fourth) removal stepof removing the transfer material provided in the first (third) coveringstep after the formation of the micropattern by the first (third orfourth) micropattern forming step; a second (fourth) covering step ofcovering the surface of the to-be-molded object with a film of thetransfer material after the removal of the transfer material in thefirst (third or fourth) removal step; a second (fifth) transfer step oftransferring the transfer micropattern onto the transfer material formedin the second covering step by pressing the die against the to-be-moldedobject having the film of the transfer material provided on its surfaceby the second (fourth) covering step; a second (fourth or fifth)micropattern forming step of forming a micropattern on the to-be-moldedobject by etching after the transfer of the micropattern by the second(fifth) transfer step, the micropattern corresponding to the transfermicropattern on the die; and a second (fourth or fifth) removal step ofremoving the transfer material provided in the second covering stepafter the formation of the micropattern by the second (fourth or fifth)micropattern forming step.

A fourteenth aspect of the present invention is the micropattern formingmethod according to the thirteenth aspect, in which, in each transferstep, the portion of the die having the micropattern formed therein isformed into a convex surface shape formed by using a part of a lateralsurface of a cylinder in such a manner that a longitudinal direction ofthe portion is set as a circumferential direction of the cylinder, orthe portion of the die having the micropattern formed therein is formedinto a convex surface shape formed by using a part of a lateral surfaceof an elliptic cylinder in such a manner that the longitudinal directionof the portion is set as a circumferential direction of the ellipticcylinder, and the transfer is performed while moving a linear pressingportion of the convex surface against the to-be-molded object from oneend to the other end of the convex surface.

A fifteenth aspect of the present invention is the micropattern formingmethod according to any one of the first to fourth aspects, in whichmicropatterns are formed in portions of the substrate corresponding toportions of one color of a checkered pattern in the first transfer stepand the first micropattern forming step, and micropatterns are formed inportions of the substrate corresponding to portions of the other colorof the checkered pattern in the second transfer step and the secondmicropattern forming step.

A sixteenth aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a covering step ofcovering a surface of the substrate with a film of a transfer material;a transfer step of transferring the transfer micropatterns atpredetermined intervals in a plurality of spots on the transfer materialformed in the covering step by pressing the mold more than once againstthe substrate having the film of the transfer material provided on itssurface by the covering step; a micropattern forming step of forming themicropattern at predetermined intervals in a plurality of spots on thesubstrate by etching after the transfer of the micropatterns by thetransfer step, the micropatterns each corresponding to the transfermicropattern on the mold; and a removal step of removing the transfermaterial provided in the covering step after the formation of themicropatterns by the micropattern forming step, in which, themicropatterns each corresponding to the transfer micropattern formed onthe mold are continuously formed on the substrate by repeating a cycleof the covering step, the transfer step, the micropattern forming stepand the removal step in this order for multiple times.

A seventeenth aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a covering step ofcovering a surface of a lower transfer material in the substrate with afilm of an upper transfer material, the substrate having its surfacecovered with a film of the lower transfer material; a transfer step oftransferring the transfer micropatterns at predetermined intervals in aplurality of spots on the upper transfer material formed in the coveringstep by pressing the mold more than once against the substrate havingthe film of the upper transfer material provided on its surface by thecovering step; a micropattern forming step of forming the micropatternsat predetermined intervals in a plurality of spots on the lower transfermaterial by etching after the transfer of the micropatterns by thetransfer step, the micropatterns each corresponding to the transfermicropattern on the mold; and a removal step of removing the transfermaterial provided in the covering step after the formation of themicropatterns by the micropattern forming step, in which, themicropatterns each corresponding to the transfer micropattern formed onthe mold are continuously formed on the lower transfer material byrepeating a cycle of the covering step, the transfer step, themicropattern forming step and the removal step in this order formultiple times, a micropattern corresponding to the micropatterns on thelower transfer material is formed on the substrate by etching after theformation of the micropatterns on the lower transfer material, andmicropatterns each corresponding to the transfer micropattern formed onthe mold are continuously formed on the substrate by removing the lowertransfer material after the formation of the micropattern on thesubstrate.

An eighteenth aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a covering step ofcovering a surface of a third material in the substrate with a film of atransfer material, the substrate being formed by stacking a firstmaterial, a film-like second material and a film-like third material; atransfer step of transferring the transfer micropatterns atpredetermined intervals in a plurality of spots on the transfer materialformed in the covering step by pressing the mold more than once againstthe substrate having the film of the transfer material provided on itssurface by the covering step; a micropattern forming step of forming themicropatterns at predetermined intervals in a plurality of spots on thethird material by etching after the transfer of the micropatterns by thetransfer step, the micropatterns each corresponding to the transfermicropattern on the mold; and a removal step of removing the transfermaterial provided in the covering step after the formation of themicropatterns by the micropattern forming step, in which themicropatterns each corresponding to the transfer micropattern formed onthe mold are continuously formed on the substrate by repeating a cycleof the covering step, the transfer step, the micropattern forming stepand the removal step in this order for multiple times.

A nineteenth aspect of the present invention is a micropattern formingmethod for continuously forming micropatterns on a substrate, themicropatterns each corresponding to a transfer micropattern formed on amold, the micropattern forming method including: a covering step ofcovering a surface of the substrate with a film of a transfer material;a transfer step of transferring the transfer micropatterns atpredetermined intervals in a plurality of spots on the transfer materialformed in the covering step by pressing the mold more than once againstthe substrate having the film of the transfer material provided on itssurface by the covering step; a provision step of providing a coveringmember in a portion where the substrate is exposed by the transfer ofthe transfer micropattern in the transfer step; and a removal step ofremoving the transfer material provided in the covering step aftercovering the portion where the substrate is exposed with the coveringmember in the provision step, in which, the micropattern correspondingto the transfer micropattern on the mold is formed on the substrate byetching after repeating the respective steps for multiple cycles in theorder of the covering step, the transfer step, the provision step andthe removal step, and the micropatterns corresponding to the transfermicropattern formed on the mold are continuously formed on the substrateby removing the covering members provided in the provision step afterthe formation of the micropattern.

According to the first to nineteenth aspects of the present invention,there is achieved an effect that micropatterns having an accurate formcan be formed on the substrate in the micropattern forming method forcontinuously forming micropatterns on the substrate, the micropatternseach corresponding to the transfer micropattern formed on the mold.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a front view showing a schematic configuration of a transferapparatus.

FIG. 2 is a side view showing the schematic configuration of thetransfer apparatus and is a view seen from an arrow H in FIG. 1.

FIGS. 3( a) to 3(d) are views schematically showing steps of amicropattern forming method according to a first embodiment of thepresent invention.

FIGS. 4( a) and 4(b) are views showing a substrate having a micropatternformed thereon.

FIGS. 5( a) and 5(b) are views showing a substrate having a micropatternformed thereon.

FIG. 6 is a view showing an installation mode of a mold to a moldcarrier and a camera included in a positional relationship detectingdevice.

FIGS. 7( a) and 7(b) are views showing a state of forming connectedmicropatterns on the substrate.

FIGS. 8( a) and 8(b) are views showing examples of results of detectionby the positional relationship detecting device.

FIGS. 9( a) and 9(b) are views showing modified examples of positionaldeviation detection by the positional relationship detecting device.

FIG. 10 is a view showing a state of the mold deformed by using anactuator.

FIGS. 11( a) and 11(b) are views showing a state of forming connectedmicropatterns on the substrate.

FIG. 12 is a view showing a state of forming connected micropatterns onthe substrate.

FIG. 13 is a view showing a state of forming connected micropatterns onthe substrate.

FIG. 14 is a view showing a state of forming connected micropatterns ona to-be-molded object.

FIG. 15 is a view showing a main part of the transfer apparatus forperforming transfer shown in FIG. 14.

FIG. 16 is a view showing a modified example in a case where connectedmicropatterns are formed on a to-be-molded object.

FIGS. 17( a) to 17(c) are views showing modified examples of the mold.

FIG. 18 is a view showing a modified example in a case where connectedmicropatterns are formed on the to-be-molded object.

FIGS. 19( a) to 19(c) are views schematically showing steps of amicropattern forming method according to a second embodiment of thepresent invention.

FIGS. 20( d) to 20(f) are views schematically showing steps of themicropattern forming method according to the second embodiment of thepresent invention.

FIGS. 21( a) to 21(d) are views schematically showing steps of amicropattern forming method according to a third embodiment of thepresent invention.

FIGS. 22( a) to 22(c) are views schematically showing steps of amicropattern forming method according to a fourth embodiment of thepresent invention.

FIGS. 23( d) to 23(f) are views schematically showing steps of themicropattern forming method according to the fourth embodiment of thepresent invention.

FIGS. 24( a) to 24(e) are views showing a conventional transfer method.

FIG. 25 is a view showing the conventional transfer method.

BEST MODE FOR CARRYING OUT THE INVENTION

With reference to the drawings, embodiments of the present inventionwill be described below.

First Embodiment

FIG. 3 is a view schematically showing steps of a micropattern formingmethod according to a first embodiment of the present invention.

The micropattern forming method is for continuously forming, on a planarsurface of a substrate W1, micropatterns (the same micropattern as amold (template or stamper) M1) each corresponding to a transfermicropattern (numerous minute convexes and concaves) formed on the moldM1 by transferring the pattern in a divided manner. An area (forexample, an area of the planar surface) of the substrate W1 on which themicropattern is to be formed is larger than that of a surface of themold M1 on which the transfer micropattern is formed. Note that the moldM1 is made of, for example, quartz glass, and the transfer micropatternis formed on a planar surface of the mold M1.

In the micropattern forming method, first, a transfer material (forexample, an ultraviolet curable resin before curing, more specifically,“PAK-01” made by Toyo Gosei Kogyo Co., Ltd.) is spin-coated onto thesurface (for example, approximately the entire planar surface on oneside in a thickness direction of the substrate W1) of the substrate(made of, for example, silicon, more specifically, single crystalsilicon) W1. Thereby, the surface of the substrate W1 is covered with athin film of transfer material W2. In this event, the substrate W1 ispreferably surface-treated to allow the surface thereof and the thinfilm to more firmly adhere to each other.

Next, the planar surface of the mold M1 having the transfer micropatternformed thereon is pressed against a part of the substrate W1 having thethin film of the transfer material W2 provided on its surface.Accordingly, the transfer micropattern on the mold M1 is transferredonto the thin film of transfer material W2 (see FIG. 3( a)). In thistransfer, the transfer material W2 is cured by irradiating the transfermaterial W2 with ultraviolet light.

Note that the transfer shown in FIG. 3( a) is performed, for example,more than once, but may also be performed only once. In FIG. 3( a), whenthe mold M1 is positioned at PS1, the mold M1 is lowered as indicated byan arrow AR1 to perform the first transfer. Thereafter, the mold M1 ismoved as indicated by an arrow AR2 and, when the mold M1 is positionedat PS2, the mold M1 is lowered as indicated by an arrow AR3 to performthe second transfer.

Moreover, in the transfer shown in FIG. 3( a), the ultravioletirradiation performed in the first transfer (transfer at PS1) allows thetransfer material W2 to be cured only at a portion of the transfermaterial W2 where a micropattern is formed in the first transfer and aportion adjacent thereto. In other words, even if the ultravioletirradiation is performed in the first transfer, a portion of thetransfer material W2 where the second transfer (transfer at PS2) is tobe performed is not cured.

Moreover, the first transfer (transfer at PS1) and the second transfer(transfer at PS2) are performed at a predetermined interval. Forexample, by performing transfer in a subsequent step as shown in FIG. 3(c) at a position between the first transfer (transfer at PS1) and thesecond transfer (transfer at PS2), a continuously connectedmicropatterns are formed on the substrate W1.

Furthermore, after the transfer shown in FIG. 3( a) is performed, verythin transfer material films (not shown) are formed in minute concaveportions W2 a of the transfer material W2, which are formed by minuteconvex portions of the transfer micropattern on the mold M1. In otherwords, at bottoms of the minute concave portions W2 a of the transfermaterial W2, the substrate W1 is covered with very thin films of thetransfer material W2.

After the transfer shown in FIG. 3( a) is performed and the micropatternof the transfer material W2 is formed, the mold M1 is moved away fromthe substrate W1 and the transfer material W2. Subsequently, a remainingfilm is removed in the same manner as the case shown in FIGS. 24( e) and24(d). Specifically, the very thin film of the transfer material W2covering the substrate W1 at the minute concave portions W2 a of thetransfer material W2 is removed by O2 asking and the like. Thus, thesurface of the substrate W1 is exposed as shown in FIG. 3( a) with thesame micropattern as the transfer micropattern on the mold M1.

After removal of the remaining film, by etching (for example, dryetching) the substrate W1 while using the transfer material W2 as a maskmaterial, a micropattern corresponding to the transfer micropattern onthe mold M1 is formed on the substrate W1. Specifically, a micropatterncorresponding to the micropattern of the transfer material W2 as shownin FIG. 3( a) is formed on the substrate W1.

Note that the transfer material W2 remains intact even after theetching. Moreover, as the dry etching, reactive ion etching (RIE),high-aspect ratio dry etching (Bosch process or DeepRIE) or the like ispreferably adopted.

After the micropattern is formed on the substrate W1, the transfermaterial W2 shown in FIG. 3( a) is removed (cleaned) by a solvent whichdissolves only the transfer material W2 without dissolving the substrateW1 (see FIG. 3( b)).

After the transfer material W2 is removed, the surface portions of thesubstrate W1 where the micropatterns are formed and other surfaceportions (portions where no micropatterns are formed) of the substrateW1, the other surface portions being connected to the above portions,are covered with a thin film of the transfer material W2. For example,approximately the entire planar surface on one side in the thicknessdirection of the substrate W1 is covered with the transfer material W2in the same manner as the case shown in FIG. 3( a).

Subsequently, in approximately the same manner as the case shown in FIG.3( a), the mold M1 is pressed against another portion continuouslyconnected to the portion where the micropattern is formed as shown inFIG. 3( b), the portion pressed against the Mold M1 being a part of thesubstrate W1 having the thin film of transfer material W2 provided onits surface. Thereafter, ultraviolet irradiation is performed totransfer the transfer micropattern onto the transfer material W2 (seeFIG. 3( c)).

Note that the mold used in the transfer shown in FIG. 3( c) and the moldused in the transfer shown in FIG. 3( a) are the same. However, the moldused in the transfer shown in FIG. 3( c) and the mold used in thetransfer shown in FIG. 3( a) may be different from each other.

After the micropattern is transferred onto the transfer material W2 asshown in FIG. 3( c), the mold M1 is moved away from the substrate W1 andthe transfer material W2, the remaining film is removed and then thesame etching as that described above is performed for the substrate W1.Thus, a micropattern which corresponds to the transfer micropattern onthe mold M1, and which is continuously connected to the micropatternsshown in FIG. 3( b) (similar to a micropattern obtained by continuouslyconnecting the transfer micropatterns on the mold M1) is formed on thesubstrate W1.

After the continuously connected micropattern are formed on thesubstrate W1, the transfer material W2 provided in the step shown inFIG. 3( c) is removed by the solvent which dissolves only the transfermaterial W2 without dissolving the substrate W1 (see FIG. 3( d)).

The substrate W1 having the micropattern thus formed thereon is used formanufacturing an electroformed mold, a film replica and the like.Specifically, a nickel mold is manufactured by a nickel electroformingprocess based on the substrate W1 having the micropattern formedthereon. Alternatively, a micropattern is transferred onto a resin byusing the substrate W1 having the micropattern formed thereon tomanufacture a resin replica such as a plastic resin and an ultravioletcurable resin. Thereafter, the nickel mold is manufactured from theresin replica by the nickel electroforming process. This nickel moldincludes a micropattern (the same micropattern as that on the substrateW1) corresponding to the micropattern formed on the substrate W1.

By use of the nickel mold, transfer of the micropattern onto a resinsubstrate is performed once or more than once continuously. Thus, anoptical element for a display, a wire-grid polarizer, a photonic crystaland art antireflection structure are generated.

Note that the continuously connected micropatterns as shown in FIG. 3(d) is formed on the substrate W1 in such a manner that a part (an endportion in a horizontal direction in FIGS. 3( a) and 3(b)) of themicropattern formed on the transfer material W2 and the substrate W1 asshown in FIGS. 3( a) and 3(b) and a part (an end portion in a horizontaldirection in FIGS. 3( c) and 3(d)) of the micropattern formed on thetransfer material W2 and the substrate W1 as shown in FIGS. 3( c) and3(d) overlap with each other (by, for example, about 100 .mu.m to 500.mu.m). However, such an overlap is not always necessary. Specifically,the end portion of the micropattern formed on the transfer material W2and the substrate W1 as shown in FIGS. 3( a) and 3(b) and the endportion of the micropattern formed on the transfer material W2 and thesubstrate W1 as shown in FIGS. 3( c) and 3(d) may be adjacent to eachother or slightly away from each other without overlapping with eachother.

The micropattern formed on the substrate W1 in the steps shown in FIG. 3is extended in a direction (a width direction of the substrate W1)perpendicular to a longitudinal direction of the substrate W1 as shownin FIG. 4( a). However, a substrate (similar to a substrate W3 shown inFIG. 5) W1 a having a micropattern extended in the longitudinaldirection of the substrate W1 as shown in FIG. 4( b) may bemanufactured, for example, by changing a mounting posture of the moldM1.

At a connection between the micropatterns (a connection between themicropattern formed in the steps of FIGS. 3( a) and 3(b) and themicropattern formed in the steps of FIGS. 3( c) and 3(d)) in thesubstrate W1 a shown in FIG. 4( b), small steps W3 a are found as in thecase of the substrate W3 shown in FIG. 5. However, the steps W3 a causeno practical inconvenience.

Here, description will be given of a transfer apparatus 1 for executingthe steps of FIGS. 3( a) and 3(c).

FIG. 1 is a front view showing a schematic configuration of the transferapparatus 1. FIG. 2 is a side view showing the schematic configurationof the transfer apparatus 1 and is a view seen from an arrow 11 in FIG.1.

Hereinafter, for convenience of explanation, it is assumed that onedirection in a horizontal direction is an X-axis direction, anotherdirection in the horizontal direction which is perpendicular to theX-axis direction is a Y-axis direction, and a direction (a top andbottom direction or a vertical direction) perpendicular to the X-axisdirection and the Y-axis direction is a Z-axis direction.

The transfer apparatus 1 is an apparatus which transfers a transfermicropattern formed on a surface (for example, a planar lower surface)of a stamper (mold) M1 onto a surface (for example, a planar uppersurface) of the transfer material W2 on the substrate W1 by allowing thesurface of the stamper M1 to come into contact with the surface of thetransfer material W2 and pressing the stamper M1 as needed.

The transfer apparatus 1 includes a base frame 3. A substrate carrier 5for holding the substrate W1 is provided in the base frame 3. Thesubstrate carrier 5 has, for example, a planar upper surface, on whichthe substrate W1 having thin transfer material W2 provided thereon canbe mounted and held. As to the substrate W1 thus mounted and held, athickness direction thereof is the Z-axis direction and the thintransfer material W2 is provided on the upper surface thereof. Moreover,the substrate W1 is located at a predetermined position in the X-axisand Y-axis directions.

The substrate carrier 5 is supported by the base frame 3 through an XY 8stage 7. Therefore, the substrate carrier 5 (the substrate W1) is freelymoved and positioned in the X-axis and Y-axis directions and is alsofreely rotated and positioned around an axis parallel to the Z axis bydriving an actuator (not shown), such as a servo motor included in theXY stage 7, under the control of a control device (not shown).

In the base frame 3, a die carrier (mold carrier) 9 is provided. The diecarrier 9 has, for example, a planar lower surface, on which the stamperM1 can be held. As to the stamper M1 thus held, the lower surface havinga transfer micropattern formed thereon faces the substrate carrier 5(the substrate W1 and the transfer material W2).

The die carrier 9 is supported by the base frame 3 through anunillustrated linear guide bearing and is freely moved and positioned inthe Z-axis direction by driving an actuator (not shown) such as a servomotor under the control of the control device.

Moreover, in the transfer apparatus 1, a UV light generator (not shown)for irradiating the substrate W1 (the transfer material W2) withultraviolet light is provided. Thus, in formation of a micropattern onthe transfer material W2, the transfer material W2 made of theultraviolet curable resin can be cured.

Note that, as the transfer material W2, a thermoplastic resin or athermosetting resin may be adopted instead of the ultraviolet curableresin. In this case, a heating device (not shown) for heating thesubstrate W1 (the transfer material W2) is provided in the transferapparatus 1. Moreover, as the substrate W1, a glass substrate may beadopted instead of the silicon substrate. Furthermore, as the materialof the mold M1, silicon, metal such as nickel, glassy carbon or the likemay be adopted instead of quartz glass.

Moreover, a positional relationship detecting device 11 and a correctiondevice 13 are provided in the transfer apparatus 1.

The positional relationship detecting device 11 is an apparatus asfollows. After the micropattern is formed on the substrate W1 by a firstgroup of single or multiples transfer and etching as shown in FIGS. 3(a) and 3(b), and before a second group of single or multiple transfer isperformed as shown in FIG. 3( c)), the positional relationship detectingdevice 11 detects a positional relationship between a micropatternformed on the substrate W1 by the first group of multiple transfer(pressing of the transfer material W2 by the mold MD and a transfermicropattern formed on the mold (the mold which is at a position forperforming the second group of transfer in the X-axis and Y-axisdirections and is away from the substrate W1 and the transfer materialW2 in the Z-axis direction, for example, the mold positioned at PS3 orPS4 in FIG. 3( c)) M1.

The correction device 13 is an apparatus which corrects a position ofthe mold M1 relative to the substrate W1, based on a result of detectionby the positional relationship detecting device 11, so as to accuratelyconnect the transfer micropattern to be formed by the second group oftransfer and etching to the micropattern formed on the substrate W1 bythe first group of transfer and etching. Note that this correction isperformed, for example, when the mold M1 is positioned at PS3 and PS4 inthe state shown in FIG. 3( c).

The positional relationship detecting device 11, the correction device13 and the like will be described in more detail by giving examples.

FIG. 6 is a view showing an installation mode of the mold M1 to the diecarrier 9 and a camera (for example, a CCD camera) 25 included in thepositional relationship detecting device 11.

In a center portion of the die carrier 9, a hole 23 penetrating in theZ-axis direction is provided. The flat-plate mold M1 is provided so asto cover a lower end of the hole 23. The ultraviolet light generated bythe UV light generator passes through the hole 23, is transmittedthrough the mold M1 and reaches the transfer material W2. The mold M1has its side surfaces supported by a mold holding member 17. Moreover,one end portion of the side surfaces is pressed by an actuator 21 suchas a piezoelectric element through a shoe 16. Thus, the mold M1 isbiased upward and provided integrally with the die carrier 9. Note that,when the mold M1 does not transmit the ultraviolet light, ultravioletirradiation is performed through the substrate carrier 5, for example.

In FIG. 6, for convenience of explanation, the mold M1 is pressed(compressed) in the X-axis direction by the actuator 21. However, themold M1 is actually compressed in the Y-axis direction by the actuator21. Moreover, in FIGS. 6 and 7, the transfer and the like are performedcontinuously in the X-axis direction to form micropatterns continuouslyconnected in the X-axis direction on the substrate W1 as shown in FIGS.4( b) and 5.

Moreover, as to the mold M1 compressed in the Y-axis direction by theactuator 21, its dimension in the Y-axis direction is DY1 in a normalstate as shown in FIG. 10. By increasing a voltage to be applied to thepiezoelectric element (actuator) 21 above a voltage in the normal state,the mold M1 is shrunk by elastic deformation to a dimension DY2 smallerthan the dimension DY1. On the other hand, by lowering the voltage to beapplied to the piezoelectric element 21 below the voltage in the normalstate, the mold M1 is elongated by elastic deformation to a dimensionDY3 larger than the dimension DY1. Therefore, by accordingly changing avalue of the voltage to be applied to the piezoelectric element 21 underthe control of the control device, the dimension of the mold M1 in theY-axis direction can be accordingly changed and maintained.

The positional relationship detecting device 11 includes the camera 25as described above. The camera 25 is provided integrally with the diecarrier 9 inside the hole 23 in the die carrier 9 by use of anunillustrated bracket, for example. The camera 25 is capable ofobserving the substrate W1 through the mold M1. To be more precise, thecamera 25 is capable of observing a connection between one of the firstgroup of transfers TR1 and one of the second group of transfers TR2,which is performed continuously with the one of the first group oftransfers TR1.

To be more specific, as shown in FIG. 7( a), assuming that amicropattern is formed on the substrate by a first transfer TR1 a of thefirst group and a micropattern is formed on the substrate by a secondtransfer TR1 b of the first group, the camera 25 is capable of observingportions of connections between the second group of transfers TR2 to beperformed and the micropatterns TR1 a and TR1 b and a portiontherearound (portions P1 to P3 shown in FIG. 7( a)).

In the case of observing the portion P1, for example, light intensitiescan be detected along a line A, a line B (overlapping portion) and aline C as shown in FIG. 7( b). In the ease of attempting to manufacturethe substrate W1 a having the micropattern as shown in FIG. 4( b) orFIG. 5, the light intensities detected along the lines A to C are asshown in FIG. 8.

Each of the light intensities along the lines A to C is in a rectangularwaveform as shown in FIG. 8( a) in a normal state. However, when aposition of a micropattern (transfer pattern on the mold M1) to beformed is shifted relative to the micropattern TR1 a by, for example,.DELTA.Y as shown in FIG. 8( b), the light intensity along the line Aand the light intensity along the line C are approximately combined.Thus, the light intensity along the line B does not have a uniformone-stage rectangular waveform but a two-stage rectangular waveform.

Note that the portions P2 and P3 are approximately the same as the caseof the portion P1.

Having detected, based on a signal received from the camera 25, that thelight intensities in the portions P1 and P2 do not have a rectangularshape as shown in FIG. 8( b), the control device accordingly controlsthe XY 8 stage 7 to correct (compensate) the position of the substrateW1 relative to the mold M1 so that the light intensities in the portionsP1 and P2 have the rectangular shape as shown in FIG. 8( a).

Moreover, having detected, based on a signal received from the camera25, that the light intensity in the portion P3 does not have therectangular shape as shown in FIG. 8( b), the control device controlsthe voltage to be applied to the piezoelectric element 21 toappropriately compensate the dimension of the mold M1 in the Y-axisdirection.

Incidentally, the positional relationship detecting device 11 may haveanother configuration.

Specifically, in the transfer apparatus 1 shown in FIG. 1, thepositional relationship detecting device 11 may include a thinplate-like detector 15. A thickness direction of the detector 15 is theZ-axis direction. Moreover, the positional relationship detecting device11 may be configured to detect a positional deviation amount of thesubstrate W1 (the transfer material W2) relative to the mold M1 byinserting the detector 15 between the mold M1 and the substrate W1 (thetransfer material W2) before execution of transfer.

In the case of inserting the detector 15 between the mold M1 and thesubstrate W1 (the transfer material W2) to detect the positionaldeviation amount, it is preferable that the detector 15 is insertedbetween the mold M1 and the substrate W1 (the transfer material W2) in astate where there is hardly any dimensional allowance since the mold M1and the substrate W1 (the transfer material W2) come as close aspossible to each other.

For example, in the case of inserting the detector 15 between the moldM1 and the substrate W1 (the transfer material W2) to detect thepositional deviation amount, it is preferable that a distance L3 betweenthe detector 15 and the mold M1 is about 0.5 mm to 3 mm and a distanceL5 between the detector 15 and the transfer material W2 is also about0.5 mm to 3 mm. Moreover, it is preferable that a thickness (dimensionin the Z-axis direction) of the detector 15 is minimized at least in aportion positioned between the mold M1 and the substrate W1 (thetransfer material W2).

The positional relationship detecting device 11 will be described inmore detail by giving examples.

The detector 15 in the positional relationship detecting device(positional deviation amount detecting device) 11 is movable between afirst position (see the detector 15 indicated by a solid line in FIG. 1)where the detector 15 is inserted between the mold M1 and the substrateW1 (the transfer material W2) when the mold M1 and the substrate W1 (thetransfer material W2) are away from each other by a predetermineddistance and a second position (see the detector 15 indicated by a chaindouble-dashed line in FIG. 1) away from the mold M1 and the substrate W1(the transfer material W2), which allows the mold M1 and the substrateW1 (the transfer material W2) to come into contact with each other.

Here, the detector 15 is integrally provided to a first detectorsupporting member 29 at a tip portion of the first detector supportingmember 29. The first detector supporting member 29 is provided to asecond detector supporting member 31 through a linear guide bearing (notshown) so as to be movable relative to the second detector supportingmember 31 in the X-axis direction. Moreover, under the control of thecontrol device, the detector 15 is moved between the first position(position indicated by the solid line in FIG. 1) where the detector isinserted between the mold and the substrate and the second position(position indicated by the chain double-dashed line in FIG. 1) away fromthe mold and the substrate by an actuator (not shown) such as apneumatic cylinder.

The second detector supporting member 31 is provided to the base frame 3through a linear guide bearing (not shown) so as to be movable in theZ-axis direction relative to the base frame 3. Moreover, the seconddetector supporting member 31 is freely moved and positioned in thevertical direction by an actuator (not shown) such as a servo motor anda ball screw (not shown) under the control of the control device.

Therefore, the position of the detect& 15 in the Z-axis direction can beadjusted according to the configurations of the mold M1 and thesubstrate W1 (the transfer material W2).

To be more specific, the positional relationship detecting device 11includes a camera (not shown). This camera is provided in a positionaway from the detector 15 (for example, in the first detector supportingmember 29). Moreover, a prism (not shown) is provided in the detector15. The positional relationship detecting device 11 is configured todetect a positional deviation in the substrate W1 (the transfer materialW2) or the mold M1 by use of the camera through the prism. Specifically,light traveling in the Z-axis direction from the substrate W1 (thetransfer material W2) or the mold M1 is reflected by the prism so as totravel in the X-axis direction, for example. The camera takes in thereflected light. Note that the thickness of the detector 15 describedabove includes a thickness of the prism. Moreover, a reflecting mirroror the like may be provided instead of the prism.

The configuration using the detector 15 as described above enablesdetection of the positional deviation in the substrate W1 (the transfermaterial W2) or the mold M1 even when the mold M1 is made of metal orthe like and is not transparent.

Accordingly, in the step of forming the micropattern on the substrate W1shown in FIG. 3, a positional relationship between a micropattern formedon the substrate W1 by the first group of transfers and the like and atransfer micropattern formed on the mold M1 before execution of thesecond group of transfers is detected by using the detector 15 and thelike in the positional relationship detecting device 11 after themicropattern is formed on the substrate W1 by the first group oftransfers and the like shown in FIG. 3( b) and before the second groupof transfers is performed, as in the case of using the camera 25described above and the like. To be more specific, the positionalrelationship between the micropattern formed on the substrate W1 and themicropattern formed on the mold M1 in the slate shown in FIG. 3( c) isdetected.

Moreover, the correction device 13 corrects a position of the mold M1relative to the substrate W1, based on a detection result on thepositional relationship, so as to accurately connect the transfermicropattern to be formed by the second micropattern forming step to themicropattern formed on the substrate W1 by the first group of transfersand the like. Specifically, a relative positional relationship betweenthe substrate W1 and the mold M1 in the state shown in FIG. 3( c) is setto be accurate.

Furthermore, in the correction of the position of the mold M1 relativeto the substrate W1 by controlling the actuator 21 in the transferapparatus 1, a change in shape of the mold M1 due to a temperaturechange, for example, is compensated to achieve an accurate shape of themold M1.

Here, with reference to FIG. 7, more detailed description will be givenof the correction and the like in the step of forming the micropatternon the substrate W1 shown in FIG. 3 by giving examples.

First, by the first group transfer step and micropattern forming step,micropatterns are formed in a first portion TR1 a of the transfermaterial W2 and in a second portion TR1 b away from the first portionTR1 a by a predetermined distance.

Subsequently, by the second group transfer step and micropattern formingstep, a micropattern is formed in a third portion TR2 between the firstand second portions TR1 a and TR1 b, the third portion TR2 continuouslyconnecting the first and second portions TR1 a and TR1 b.

Here, as described above, the positional relationship detecting device11 detects a positional deviation amount of a transfer micropatternformed on the mold M1 relative to the first portion TR1 a at a boundarybetween the first portion TR1 a and the transfer micropattern on themold M1 and a positional deviation amount of the transfer micropatternformed on the mold M1 relative to the second portion TR1 b at a boundarybetween the second portion TR1 b and the transfer micropattern on themold M. Thereby, the positional relationship detecting device 11 detectsa positional relationship between the micropattern formed by the firstgroup micropattern forming step and the transfer micropattern formed onthe mold (the mold located at a position for performing a second groupof transfers) M1.

To be more specific, the portion of the mold M1 having the transfermicropattern formed therein is formed to have a rectangular planarshape. By arranging the first portion TR1 a, the third portion TR2 andthe second portion TR1 b in a straight line, a micropattern is formedwithin a rectangular range.

The positional relationship detecting device 11 detects, on one side ina width direction of the rectangular micropattern, a relative positionaldeviation amount (the positional deviation amount of the transfermicropattern on the mold M1 relative to the first portion TR1 a) in theportion P1 at the boundary between the first portion TR1 a and thetransfer micropattern formed on the mold M1 and a relative positionaldeviation amount (the positional deviation amount of the transfermicropattern on the mold M1 relative to the second portion TR1 b) in theportion P2 at the boundary between the second portion TR1 b and thetransfer micropattern formed on the mold M1.

Moreover, the positional relationship detecting device 11 detects, onthe other side in the width direction of the rectangular micropattern, arelative positional deviation amount (the positional deviation amount ofthe transfer micropattern on the mold M1 relative to the second portionTR1 b) in the portion P3 at the boundary between the second portion TR1b (or the first portion TR1 a) and the transfer micropattern formed onthe mold M1.

The correction device 13 compensates the position and posture of thesubstrate W1 by use of the XY .theta. stage 7 based on the positionaldeviation amounts on one side (the portions P1 and P2) in the widthdirection and the positional deviation amount on the other side (theportion P3) in the width direction. Moreover, the correction device 13also compensates the dimension of the mold M1 in the width direction byusing the actuator 21 to change an elastic deformation amount of themold M1 in the width direction in the rectangular micropattern.

Note that, as shown in FIGS. 4( b) and 11(a), in the case of forming amicropattern extending in the longitudinal direction (X-axis direction,a horizontal direction in FIG. 11( a)), the position of the mold M1relative to the substrate W1 may be corrected by a correction, forexample, in the Y-axis direction, in a rotation amount around the Z axisand a correction using the actuator 21 if necessary in the second groupof transfers TR2.

On the other hand, as shown in FIGS. 4( a) and 11(b), in the case offorming a micropattern extending in the width direction (Y-axisdirection, a vertical direction in FIG. 11( b)) on the substrate W1, theposition of the mold M1 relative to the substrate W1 may be corrected bya correction, for example, in the X-axis direction, in a rotation amountaround the Z axis and a correction using the actuator 21 if necessary inthe second group of transfers TR2.

Moreover, in the above description, the positional relationship isdetected by comparing the position of the micropattern formed on thesubstrate W1 with the position of the micropattern on the mold M1.However, eye marks may be put on the substrate W1 and the mold M1, andthese eye marks may be photographed by a camera or the like to detect apositional relationship thereby performing a correction.

For example, as shown in FIG. 9( a), eye marks MM1 to MM4 are put onfour corners of the mold M1. Note that the transfer micropattern isassumed to be provided in a region TRS2 inside the eye marks MM1 to MM4.

When a micropattern is formed by performing a first group of transfersTR1 on a substrate W4, eye marks MW1 to MW4 corresponding to the eyemarks MM1 to MM4 on the mold M1 are put on the substrate W4 togetherwith the micropattern. Thereafter, in execution of a second group oftransfers TR2, positional deviation amounts between the eye marks MW2and MW4 on the substrate W4 and the eye marks MM1 and MM3 on the mold M1are detected. Thus, a positional deviation in the mold M1 (the substrateW4) may be corrected when the second group of transfers TR2 is to beperformed relative to the position of the first group of transfers TR1.

Moreover, as shown in FIG. 9( b), eye marks MW6 to MW11 may bepreviously put on a substrate W4 a before formation of a transfermicropattern. Note that the transfer micropattern is formed in a regionTRS1 inside the eye marks MW6 to MW11.

In execution of the first group of transfers TR1, a positional deviationin the mold M1 (the substrate W4 a) may be corrected by detectingpositions of at least two of the eye marks MW6 to MW9 and detecting apositional deviation amount of the mold M1 to the substrate W4 a basedon a result of the above detection. Also in execution of the secondgroup of transfers TR2, as in the case of the execution of the firstgroup of transfers TR1, a positional deviation in the mold M1 (thesubstrate W4 a) may be corrected by detecting positions of at least twoof the eye marks MW7, MW9, MW10 and MW11 and detecting a positionaldeviation amount of the mold M1 to the substrate W4 a based on a resultof the above detection.

Furthermore, in the case shown in FIG. 9( b), a positional deviation inthe mold M1 (the substrate W4 a) may be corrected by providing eye marksalso on the mold M1 and detecting positional deviation amounts betweenthe eye marks previously provided on the substrate W4 a and the eyemarks provided on the mold M1.

Incidentally, as already understood, the transfer apparatus 1 is anapparatus used for transferring a transfer micropattern on the mold M1onto the transfer material W2 by pressing the mold M1 against thesubstrate W1 as shown in FIGS. 3( a) and 3(c). Therefore, differentapparatuses are used for covering the surface of the substrate W1 with afilm of the transfer material W2 or for forming a micropattern on thesubstrate W1 by etching and removing the transfer material W2 as shownin FIGS. 3( b) and 3(d). In this event, the substrate W1 is removed fromthe transfer apparatus 1.

As shown in FIGS. 4( a) and 4(b), by using the substrate W1 (W1 a)having the transfer micropattern formed on its rectangular surface as adie M3, the micropattern on the die M3 may be transferred onto a layerto be molded (for example, an ultraviolet curable resin, a thermoplasticresin or the like) W6 provided on an to-be-molded object (for example,silicon, glass or the like) W5 (see FIG. 14). In this case, thesubstrate W1 (W1 a) may be used as it is as the mold. Alternatively, anickel mold may be manufactured (formed) by electroforming, for example,as described above from the substrate W1 (W1 a) and transfer may beperformed by use of the nickel mold.

Furthermore, in execution of the transfer using the die M3, it ispreferable to perform the transfer as follows. As shown in FIG. 14, aportion (surface) of the die M3 having the micropattern formed thereinis formed into a convex surface shape formed by using a part of alateral surface of a cylinder in such a manner that a longitudinaldirection of the portion is set as a circumferential direction of thecylinder and a width direction of the surface is set as a heightdirection of the cylinder. Moreover, the transfer is performed by movinga linear pressing portion (extended in a direction perpendicular to thepage space of FIG. 14) of the convex surface pressed against theto-be-molded object W5 (the to-be-molded layer W6) from one end to theother end of the convex surface in its longitudinal direction (forexample, by moving the linear pressing portion from the left-side end tothe right-side end in FIG. 14).

Moreover, the similar transfer may be performed by forming the portion(surface) of the die M3 having the micropattern formed therein into aconvex surface shape formed by using a part of a lateral surface of anelliptic cylinder, in such a manner that the longitudinal direction ofthe portion is set as a circumferential direction of the ellipticcylinder and the width direction of the surface is set as a heightdirection of the elliptic cylinder.

Furthermore, after the first transfer shown in FIG. 14 is performed, thesimilar transfer may be performed by moving the die M3 in a widthdirection (direction perpendicular to the page space of FIG. 14) of themicropattern on the die M3 relative to the to-be-molded object W5 (theto-be-molded layer W6) so as to perform transfer, onto the to-be-moldedlayer W6 on the to-be-molded object W5, in which the micropattern on thedie M3 is connected in the width direction (see FIG. 13).

Here, description will be given of a transfer apparatus 1 a forperforming transfer using a convex surface in the shape of a lateralsurface of a cylinder as shown in FIG. 14.

The transfer apparatus 1 a is different from the transfer apparatus 1described above in that a lower surface of a die carrier 51 for holdingthe die M3 is formed in the shape of a lateral surface of a cylinder andthe die carrier 51 is swung around a predetermined axis CL1. However,other configurations are almost the same as that of the transferapparatus 1 described above.

FIG. 15 is a view showing a main part of the transfer apparatus 1 a.

The transfer apparatus 1 a will be described in detail. Between asubstrate carrier (substrate table) 5 and a movable member 19(equivalent to the die carrier 9 in the transfer apparatus 1), the diecarrier 51 is provided. The die carrier 51 has a convex surface 53 atits bottom. The convex surface 53 faces, in an approximately parallelstate, an upper surface of a to-be-molded object (on which ato-be-molded layer W6 is provided) W5 held by the substrate carrier 5,the upper surface being a surface on one side in a thickness direction.

The convex surface 53 is formed by using a part of a lateral surface ofa cylinder. Note that the cylinder does not have to have a completecylindrical shape but may have a shape close to the cylindrical shape,for example, an elliptic cylindrical shape. Furthermore, the convexsurface 53 may be formed by using a part of a lateral surface of acolumnar solid (a solid formed by a trajectory of a plane having apredetermined shape, such as a circle and an ellipse, when the planehaving the predetermined shape is moved by a predetermined distance in adirection perpendicular to the plane).

The convex surface 53 of the die carrier 51 will be described in moredetail. The convex surface 53 has a shape of a small-area surface amongfour surfaces (two large-area surfaces and two small-area surfaces)obtained by eating the lateral surface of the cylinder by a first planeincluding a central axis (extended in a height direction of thecylinder) of the cylinder and a second plane which includes the centralaxis of the cylinder and intersects with the first plane at a smallangle.

Note that the convex surface 53 has a shape close to a plane since adiameter of the cylinder is large and the intersecting angle is small.Assuming that an extended axial direction (direction perpendicular tothe sheet surface of FIG. 2) of the central axis of the cylinder is alength direction of the convex surface 53 and a circumferentialdirection (approximately horizontal direction in FIG. 15) of the lateralsurface of the cylinder is a width direction of the convex surface 53, acenter portion of the convex surface 53 protrudes only by about 0.1 mm(T) to a width B of 300 mm, for example, as shown in FIG. 15.

Accordingly, the cylinder has a large radius such that a proportion of aprotrusion amount T of the center portion of the convex surface 53 tothe with B of the convex surface 53 is, for example, “ 1/100000 to1/3000”. Specifically, the radius of the cylinder has a value as largeas 125 to 2750 times the width B of the convex surface 53.

Moreover, a die 55 (the die M3) for transfer is allowed to follow theconvex surface 53 and can be held by vacuum adsorption, for example. Thedie 55 is formed by Ni electroforming molding as described above in theshape of a thin rectangular flat plate. An ultra micropattern fortransfer is formed on one surface (a lower side in FIG. 15) of the die55.

Note that the radius of the cylinder may be such that a proportion ofthe protrusion amount T of the center portion of the convex surface 53to the width B of the convex surface 53 is “ 1/3000 to 1/30”. In otherwords, the radius of the cylinder may have a value 3 to 125 times thewidth B of the convex surface 53. For example, when the width B of theconvex surface 53 is 300 mm, the protrusion amount T may be increased toabout 10 mm.

Moreover, the die carrier 51 is supported by the movable member 19through a movable member 57 and is movable relative to the substratecarrier 5 in a direction (vertical direction, the Z-axis direction) ofcoming close to and separating from the substrate carrier 5 along withthe movement of the movable member 19.

Note that, although the die carrier 51 and the die 55 are separate fromeach other in the above description, the die carrier 51 and the die 55may be integrated with each other. In other words, a transfer patternmay be provided directly on the convex surface 53 of the die carrier 51.

Moreover, pressing means 59 is provided in the transfer apparatus 1 a.The pressing means 59 is used for allowing the die 55 held by the diecarrier 51 to come close relative to the to-be-molded object W5 (theto-be-molded layer W6) held by the substrate carrier 5, pressing theto-be-molded object W5 (the to-be-molded layer W6) with the die 55 andthus transferring a transfer pattern on the die 55 onto the to-be-moldedlayer W6 on the to-be-molded object W5.

The pressing means 59 is configured to press the to-be-molded object W5(the to-be-molded layer W6) with the die 55 by moving a linear pressingportion parallel to the central axis of the cylinder from one end to theother end of the convex surface 53 (from the left side to the right sidein FIG. 15).

Note that the pressing portion is extended in the length direction ofthe convex surface 53 (in the direction perpendicular to the sheetsurface of FIG. 15). Moreover, the pressing portion is formed between apart of a surface of the die 55 having the transfer pattern formedthereon, the die 55 being held by the convex surface 53 of the diecarrier 51, and a surface of the to-be-molded object W5 (theto-be-molded layer W6) that comes into contact with the part of thesurface. The pressing portion actually has a certain width (width in thehorizontal direction in FIG. 2).

Moreover, in the transfer apparatus 1 a, UV (ultraviolet) irradiationmeans 61 is provided, which irradiates, with UV (ultraviolet) light, apressed portion (including the vicinity of the pressed portion) that isbeing pressed by the pressing means 59 or the pressed portion that isbeing pressed by the pressing means 59 and a portion already pressed bythe pressing means 59. Note that a portion of the to-be-molded layer W6which is yet to be pressed is irradiated with no ultraviolet light inorder to prevent curing before pressing.

The transfer apparatus 1 a will be described in more detail. Thesubstrate carrier 5 holds the to-be-molded object W5 (the to-be-moldedlayer W6) having the shape of a rectangular flat plate on a rectangularplane (upper surface) of the substrate carrier 5 extended in the X-axisand Y-axis directions. The to-be-molded object W5 (the to-be-moldedlayer W6) includes the to-be-molded object W5 having the shape of arectangular flat plate and the thin-film to-be-molded layer W6 having atransfer pattern formed on one surface in the thickness direction of theto-be-molded object W5. The to-be-molded object W5 (the to-be-moldedlayer W6) is held on the upper surface of the substrate carrier 5 insuch a manner that the surface on which the to-be-molded layer W6 isprovided faces up (in such a manner that a lower surface opposite to thesurface on which the to-be-molded layer W6 is provided comes intocontact with the upper surface of the substrate carrier 5.

Below the movable member 19, the different movable member 57 isprovided. This movable member 57 is movable in the X-axis direction tothe movable member 19 through a linear guide bearing 58. Moreover, atone end (the left-side end in FIG. 15) of the movable member 57 in theX-axis direction, a stopper 63 is provided, with which the movablemember 57 comes into contact. Moreover, at the other end of the movablemember 57 in the X-axis direction, biasing means such as a compressionspring 65 for biasing the movable member 57 toward the stopper 63(leftward in FIG. 15) is provided.

Inside (upper side in FIG. 15, the side where an unillustrated centralaxis of the cylinder exists relative to the convex surface 53) theconvex surface 53 of the die carrier 51 and in an intermediate portion(for example, in an approximately center portion in the X-axisdirection) of the convex surface 53, a swinging central axis CL1 isprovided. This swinging central axis CL1 is a straight line extended inthe Y-axis direction. The die carrier 51 is supported so as to beswingable to the movable member 57 about the swinging central axis CL1.

Note that the swinging central axis CL1 is positioned close to theconvex surface 53. Specifically, the swinging central axis CL1 ispositioned close to the convex surface 53, the position being on theconvex surface 53 side between the central axis of the cylinder and theconvex surface 53. To be more specific, as shown in FIG. 15, a distanceL1 between the convex surface 53 and the swinging central axis CL is setsmaller than the width B of the convex surface 53. Note that thedistance L1 may be set equal to or slightly larger than the width B.

Incidentally, when the convex surface 53 is formed by using a part of alateral surface of an elliptic cylinder, the convex surface 53 is formedof a convex surface having a larger curvature radius between two kindsof convex surfaces obtained by cutting the lateral surface of theelliptic cylinder by two planes (placed at positions symmetrical to eachother about the central axis extended in a height direction of theelliptic cylinder) which are parallel to the short axis of the ellipse,extended in the height direction of the elliptic cylinder and away fromeach other.

The swinging central axis of the convex surface formed by using a partof the lateral surface of the elliptic cylinder is also positioned closeto the convex surface as in the case of the convex surface 53 formed byusing a part of the lateral surface of the cylinder. Note that theswinging central axis of the convex surface formed by using the ellipticcylinder may be allowed to coincide with the central axis of theelliptic cylinder by increasing a difference between the long and shortaxes of the elliptic cylinder.

Between the die carrier 51 and the movable member 57, biasing means andan actuator are provided. The biasing means is formed of, for example, adisc spring 67 provided on the left side in FIG. 15. The biasing meansbiases the die carrier 51 so as to swing the die carrier 51 in onedirection (direction indicated by an arrow AR11 in FIG. 15) about theswinging central axis CL1. On the other hand, the actuator is formed of,for example, a piezoelectric element 69 provided on the right side inFIG. 15. When a voltage is applied to the piezoelectric element 69 andthe voltage is gradually increased under the control of a control device(not shown) in the transfer apparatus 1 a, the piezoelectric element 69is gradually extended and, the die carrier 51 is swung in the otherdirection (direction indicated by an arrow AR13 in FIG. 15) about theswinging central axis al even though the mold carrier is biased by thedisc spring 67.

Note that an actuator such as a motor may be used instead of thepiezoelectric element. To be more specific, the die carrier 51 may beswung by using a servo motor to rotate a nut of a ball screw therebylinearly moving a threaded shaft of the ball screw.

In the case of pressing the to-be-molded object W5 (the to-be-moldedlayer W6) with the die 55 to perform transfer onto the to-be-moldedobject W5 (the to-be-molded layer W6), first, the die 55 is lifted to beaway from the to-be-molded object W5 (the to-be-molded layer W6), andthe piezoelectric element 69 is turned off (is set in a state where novoltage is applied thereto). Note that, in FIG. 15, a center portion 55Bof the die 55 is the lowest among the portions of the die 55. However,in an off-state of the piezoelectric element 69, a left end (where thedisc spring 67 is provided) 55A of the die 55 becomes the lowest amongthe portions of the die 55 by the biasing force of the disc spring 67.

In the state where the left end 55A of the die 55 is the lowest asdescribed above, the movable member 19 is lowered until the left end 55Aof the die 55 comes into contact with the to-be-molded object W5 (theto-be-molded layer W6) with a predetermined pressure. As a result, thedie 55 is located at a position indicated by a chain double-dashed linein FIG. 15. Here, when the piezoelectric element 69 is turned on(voltage is applied thereto) and is gradually extended, the die 55 (thedie carrier 51) is swung. Accordingly, a contact position (a pressingposition by the die 55) between the die 55 indicated by the chaindouble-dashed line in FIG. 15 and the to-be-molded object W5 (theto-be-molded layer W6) is moved from the left to the right in FIG. 15.Eventually, a right end 55C of the die 55 becomes the lowest and comesinto contact with the to-be-molded object W5 (the to-be-molded layer W6)

When the contact position (pressing portion) between the die 55 and theto-be-molded object W5 (the to-be-molded layer W6) is moved from theleft to the right in FIG. 15, feedback control based on pressing forcedetected by an unillustrated load cell (capable of measuring pressingforce of the die 55 against the to-be-molded object W5 (the to-be-moldedlayer W6), pressing force detecting means) is performed to maintain thepressing force of the die 55 against the to-be-molded-object W5 (theto-be-molded layer W6) at a constant value. Thus, torque of anunillustrated servo motor (for driving the movable member 19) iscontrolled by the control device.

Moreover, when the contact position (pressing portion) between the die55 and the to-be-molded object W5 the to-be-molded layer W6) is movedfrom the left to the right in FIG. 15, a height position of the movablemember 19 is accordingly changed. Thus, even though the central axis ofthe cylinder and the swinging central axis CL1 of the die carrier 51including the convex surface 53 do not coincide with each other, thepressing Portion can be smoothly moved from the left to the right inFIG. 15.

By using a fluid pressure cylinder such as a pneumatic cylinder insteadof the servo motor and controlling a pressure of a fluid supplied to thecylinder, the pressing force of the die 55 against the to-be-moldedobject W5 (the to-be-molded layer W6) can be maintained at a constantvalue as in the case of the feedback.

Note that, in FIG. 15, the swinging central axis CL1 is placed in thecenter portion in the X-axis direction, the disc spring 67 is placed onone side and the piezoelectric element 69 is placed on the other side.However, the swinging central axis CL1 may be placed on the one side andthe disc spring 67 and the piezoelectric element 69 may be placed on theother side.

Furthermore, as described above, the movable member 57 is moved in theX-axis direction to the movable member 19. Thus, when the to-be-moldedobject W5 (the to-be-molded layer W6) is pressed by lowering the movablemember 19 and swinging the die carrier 51 (the die 55) with thepiezoelectric element 69, the movable member 57 is moved away from thestopper 63 despite being biased by the spring 65. Thus, the position ofthe swinging central axis CL1 is slightly moved relative to theto-be-molded object W5 (the to-be-molded layer W6) in a direction(rightward in FIG. 15) of the movement of the pressing portion.

The movement of the swinging central axis CL1 can prevent problems (forexample, deformation of a pattern to be transferred onto theto-be-molded layer W6 due to small positional deviation in the movementdirection (X-axis direction) of the pressing portion between thetransfer pattern on the die 55 and the to-be-molded layer W6) which arecaused when a distance of the movement of the pressing portion in thedie 55 is longer than a distance of the movement of the pressing portionin the flat-plate to-be-molded object W5 (the to-be-molded layer W6).

Next, the UV (ultraviolet light) irradiation means 61 will be described.

Below the substrate carrier 5, a shutter 71 in the form of a flat plateis provided. In the shutter 71, a slit 73 extended in the Y-axisdirection is provided. The slit 73 divides the shutter 71 into aright-side portion 71A and a left-side portion 71B as shown in FIG. 15.The shutter 71 is guided by an unillustrated guide member and moved inthe X-axis direction by an unillustrated actuator such as a servo motor.Accordingly, the slit 73 is also moved in the X-axis direction.

Moreover, below the shutter 71, UV light sources (UV lights) 75 areprovided in a state where the UV lights 75 are turned on, the shutter 71is moved in synchronization with the movement of the pressing portionunder the control of the control device. Accordingly, only a portionwhere the to-be-molded object W5 (the to-be-molded layer W6) is pressedby the die 55 is irradiated with UV light. Note that, if the left-sideportion 71B of the shutter 71 is removed, a portion that is beingpressed and the already pressed portion are irradiated with UV light.

In the case of moving the shutter 71 in synchronization with themovement of the pressing portion, the shutter 71 is moved according tothe value of the voltage to be applied to the piezoelectric element 69,for example.

By using the transfer apparatus la and the die M3 described above,transfer onto the to-be-molded layer W6 and formation of a micropatternon the to-be-molded object W5 may be performed in the same manner as thecase shown in FIG. 3. In this case, as shown in FIG. 13, a micropatternis formed in a portion TR11 of the to-be-molded object W5 by the firstgroup of transfers and the like and the micropattern is formed in aportion TR12 of the to-be-molded object W5 by the second group oftransfers and the like. Therefore, a micropattern obtained bytwo-dimensionally extending the transfer micropattern originally formedon the mold M1 is continuously formed on the to-be-molded object W5through the die M3.

Incidentally, micropatterns as shown in FIG. 12 may be formed by usingthe steps shown in FIG. 3. Specifically, micropatterns are formed inportions (TR1 portions indicated by diagonal lines in FIG. 12) of thesubstrate W1, the portions corresponding to portions of one color of acheckered pattern, by the first group of transfers and micropatternformation. Moreover, micropatterns are formed in portions (TR2 portionsshown in FIG. 12) of the substrate, the portions corresponding toportions of the other color of the checkered pattern, by the secondgroup of transfers and micropattern formation.

When the micropatterns are formed as described above, some portions ofthe substrate W1 corresponding to the portions of the one color of thecheckered pattern are adjacent to each other. However, the portions areadjacent to each other at their corners, in other words, the portionsare not in a line contact state but in a point contact state. Thus; evenif the transfer material W2 swells up due to the transfer, there ishardly any influence of the swelling. Thus, accurate transfer onto thetransfer material W2 can be executed.

Furthermore, as shown in FIG. 16, micropatterns may be continuouslyformed on the substrate by multiple groups of steps, such as a thirdgroup of transfers and formation of micropatterns TR3, in addition tothe first group of transfers and the formation of the micropatterns TR1as well as the second group of transfers and the formation of themicropatterns TR2.

Moreover, the transfer micropattern on the mold M1 may be obliquelyextended as shown in FIG. 17( a). A transfer micropattern on a mold M4may be formed of multiple minute cylindrical (or square columnar or thelike) protrusions as shown in FIG. 17( b). Alternatively, a transfermicropattern on a mold M5 may be formed of multiple minute cylindrical(or square columnar or the like) holes as shown in FIG. 17( c). Theprotrusions or the holes may have the same size or different sizes fromeach other.

Moreover, as shown in FIG. 18, continuous micropatterns may be formed ona disk-shaped substrate by the first group of transfers and formation ofmicropatterns TR1 as well as the second group of transfers and formationof micropatterns TR2.

Note that the micropattern forming method according to the firstembodiment is an example of a micropattern forming method forcontinuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold. Themicropattern forming method includes: a covering step of covering asurface of the substrate with a film of a transfer material; a transferstep of transferring the transfer micropattern at predeterminedintervals in a plurality of spots on the transfer material formed in thecovering step by pressing the mold more than once against a part of thesubstrate having the film of the transfer material provided on itssurface by the covering step, a micropattern forming step of forming themicropatterns at predetermined intervals in a plurality of spots on thesubstrate by etching after the transfer of the micropatterns by thetransfer step, the micropatterns each corresponding to the transfermicropattern on the mold; and a removal step of removing the transfermaterial provided in the covering step after the formation of themicropatterns by the micropattern forming step. The micropatterns eachcorresponding to the transfer micropattern formed on the mold arecontinuously formed on the substrate by repeating a cycle of thecovering step, the transfer step, the micropattern forming step and theremoval step in this order for multiple times while accordingly changingpositions to form micropatterns in the transfer step and themicropattern forming step.

According to the micropattern forming method according to the firstembodiment, after micropatterns (first micropatterns) are formed on thesubstrate W1 by the first (first-group) covering step, the first(first-group) transfer step and the first (first-group) micropatternforming step, the transfer material W2 formed in the first covering stepis removed. After the removal, micropatterns (second micropatterns) areformed on the substrate W1 by a second (second-group) covering step, asecond (second-group) transfer step and a second (second-group)micropattern forming step. Thus, in execution of the second transferstep, the transfer material W2 swelling up due to execution of the firsttransfer step is removed.

Therefore, even if the first and second micropatterns are connected toeach other, accurate transfer can be executed in the second transferstep. Accordingly, connections between the micropatterns formed on thesubstrate W1 in the first micropattern forming step and themicropatterns formed on the substrate W1 in the second micropatternforming step can be accurately formed. Thus, the micropatterns having anaccurate form can be continuously formed on the substrate W1.

Moreover, a position of the mold M1 relative to the substrate W1 iscorrected by a correction step. Thus, the micropatterns formed on thesubstrate W1 by the first transfer step and the like and themicropatterns formed on the substrate W1 by the second transfer step andthe like are accurately connected to each other. As a result, moreaccurate micropatterns can be formed on the substrate W1.

Moreover, the mold M1 changed in shape by using the actuator 21 iscompensated to an accurate shape in the correction step. Thus, even ifthe shape of the mold M1 is changed by a temperature change or the like,accurate transfer can be executed.

Furthermore, as shown in FIGS. 14 and 15, the transfer is performedwhile moving the pressing portion from the one end to the other end ofthe convex portion of the die M3. Thus, air bubbles are less likely tobe generated in the to-be-molded layer W6 on the to-be-molded object W5.Specifically, when the transfer is performed by pressing the entireplanar surface of the die M3 against the to-be-molded layer W6 on theto-be-molded object W5 in the form of the flat plate, air present in thecenter portion of the die M3 is unlikely to escape from the periphery ofthe die M3 to the outside (outside of the pressing surface). Thus, airbubbles may be generated in the to-be-molded layer W6. However, bypressing the to-be-molded object W5 (the to-be-molded layer W6) whilemoving the pressing portion from one end to the other end of the die 55,there never arises a situation where air is unlikely to escape.

Moreover, the transfer is performed while moving the pressing portionfrom one end to the other end of the die M3, in other words, theto-be-molded object W5 is not simultaneously pressed by the entiresurface of the die M3. Thus, the pressing force for the transfer can bereduced compared with the conventional case. As a result, accuratetransfer can be performed without increasing rigidity of the apparatusto be used for the transfer.

Furthermore, when the pressing is finished, the entire surface of themold does not adhere to the to-be-molded object unlike the conventionalcase but only the moved pressing portion adheres to the to-be-moldedobject W5 (the to-be-molded layer W6). Thus, a force to separate theto-be-molded object W5 (the to-be-molded layer W6) from the die M3 canbe reduced. As a result, mold release is facilitated.

Second Embodiment

FIGS. 19 and 20 are views schematically showing steps of a micropatternforming method according to a second embodiment of the presentinvention.

The micropattern forming method according to the second embodiment isdifferent from the micropattern forming method in that a lower transfermaterial (for example, silicon oxide) W7 and an upper transfer material(for example, ultraviolet curable resin) W2 are provided in a substrate(for example, silicon) W1 and a micropattern is formed on the substrateW1 by etching using the lower transfer material W7 as a mask material.The other points are approximately the same as the micropattern formingmethod according to the first embodiment.

To be more specific, in the micropattern forming method according to thesecond embodiment, first, a surface (for example, approximately theentire planar surface of the lower transfer material W7) of the lowertransfer material W7 in the substrate W1 having its surface covered witha thin film of the lower transfer material W7 is covered with a thinfilm of the upper transfer material (for example, UV curable resinbefore being cured) W2. By this covering, the substrate W1, the lowertransfer material W7 and the upper transfer material W2 are stacked.

Subsequently, a transfer micropattern is transferred onto the uppertransfer material W2 by pressing a mold M1 against a part of thesubstrate W1 (the lower transfer material W7) having the thin film ofthe upper transfer material W2 provided on its surface (see FIG. 19(a)).

By etching the lower transfer material W7 after the transfer of themicropattern onto the upper transfer material W2, a micropatterncorresponding to the transfer micropattern on the mold M1 is formed onlyon the lower transfer material W7. Thereafter, the upper transfermaterial W2 is removed (see FIG. 19( b)).

After the removal of the upper transfer material W2, surface portions ofthe lower transfer material W7 where the micropatterns are formed andother surface portions of the lower transfer material W7, the othersurface portions being connected to the above portions, (for example,approximately the entire planar surface of the lower transfer materialW7) are covered with a thin film of the upper transfer material W2.

Thereafter, a transfer micropattern is transferred onto the uppertransfer material W2 by pressing the mold M1 against other portionscontinuously connected to the portions having the micropatterns formedtherein shown in FIG. 19( b), the other portions being a part of thesubstrate W1 (the lower transfer material W7) having the thin film ofthe upper transfer material W2 provided on its surface (see FIG. 19(c)).

By etching the lower transfer material W7 after the transfer of themicropattern onto the upper transfer material W2, micropatterns whichcorrespond to the transfer micropattern on the mold 1141 and arecontinuously connected to the micropatterns shown in FIG. 19( b) areformed only on the lower transfer material W7. The substrate W1 is notetched by the etching described above. After the formation of themicropatterns on the lower transfer material W7, the upper transfermaterial is removed (see FIG. 20( d)).

By etching the substrate W1 after the removal of the upper transfermaterial W2, a micropattern corresponding to the micropatterns on thelower transfer material W7 (the continuous transfer micropattern on themold M1) is formed on the substrate W1 (see FIG. 20( e)) and then thelower transfer material W7 is removed (see FIG. 20( f)).

The micropattern forming method according to the second embodimentachieves the following effects in addition to the effects achieved bythe micropattern forming method according to the first embodiment.

According to the micropattern forming method according to the secondembodiment, micropatterns are formed on the lower transfer material W7while shifting times in the first (first-group) micropattern formingstep and the second (second-group) micropattern forming step.Thereafter, by etching the substrate W1 on which the lower transfermaterial W7 having the micropatterns is provided, the micropattern isformed on the substrate W1. Specifically, the formation of themicropattern on the substrate W1 by etching is performed not in stagesbut in one stage. Thus, the micropattern having a more accurate form canbe formed on the substrate, such that concave portions of themicropattern formed on the substrate W1 have a uniform depth.

As the substrate W1, a glass substrate may be adopted. As the lowertransfer material, silicon nitride, a thin film of metal such aschromium and aluminum or a resin such as an acrylic resin may beadopted. As the upper transfer material, a thermoplastic resin or athermosetting resin may be adopted.

Note that the micropattern forming method according to the secondembodiment is an example of a micropattern forming method forcontinuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold. Themicropattern forming method includes: a covering step of covering asurface of a lower transfer material in the substrate with a film of anupper transfer material, the substrate having its surface covered with athin film of the lower transfer material; a transfer step oftransferring the transfer micropattern at predetermined intervals in aplurality of spots on the upper transfer material formed in the coveringstep by pressing the mold more than once (for example, at intervalsslightly narrower than a width of the mold) against a part of thesubstrate having the thin film of the upper transfer material providedon its surface by the covering step; a micropattern forming step offorming the micropatterns at predetermined intervals in a plurality ofspots on the lower transfer material by etching after the transfer ofthe micropatterns by the transfer step, the micropatterns eachcorresponding to the transfer micropattern on the mold; and a removalstep of removing the transfer material provided in the covering stepafter the formation of the micropatterns by the micropattern formingstep. The micropatterns each corresponding to the transfer micropatternformed on the mold are continuously formed on the lower transfermaterial by repeating a cycle of the covering step, the transfer step,the micropattern forming step and the removal step in this order formultiple times while accordingly changing positions to formmicropatterns in the transfer step and the micropattern forming step.Thereafter, a micropattern corresponding to the micropatterns on thelower transfer material is formed on the substrate by etching after theformation of the micropatterns on the lower transfer material.Subsequently, micropatterns each corresponding to the transfermicropattern formed on the mold are continuously formed on the substrateby removing the lower transfer material after the formation of themicropattern on the substrate.

Third Embodiment

FIG. 21 is a view schematically showing steps of a micropattern formingmethod according to a third embodiment of the present invention.

The micropattern forming method according to the third embodiment isdifferent from the micropattern forming method according to the firstembodiment in that a substrate W1 is formed by stacking a first materialW11 made of, for example, silicon, a second material W8 made of, forexample, silicon dioxide, and a third material W9 made of, for example,silicon. The other points are approximately the same as the micropatternforming method according to the first embodiment.

To be more specific, in the micropattern forming method according to thethird embodiment, first, a surface of the third material W9 in thesubstrate (SOI; silicon on insulator) W1 is covered with a thin film ofa transfer material (for example, a ultraviolet curable resin) W10, thesubstrate W1 formed by stacking the plate-like first material (forexample, Si; silicon) W11, the thin-film-like second material (forexample, silicon oxide) W8, and the thin-film-like third material (forexample, Si; the third material may be the same as or different from thefirst material W11).

Subsequently, a transfer micropattern is transferred onto the transfermaterial W10 by pressing a mold M1 against a part of the substrate W1having a thin film of the transfer material W10 provided on its surface(see FIG. 21( a)).

By etching after the transfer of the micropattern onto the transfermaterial W10, a micropattern corresponding to the transfer micropatternon the mold M1 is formed only on the third material W9. Thereafter, thetransfer material W10 is removed (see FIG. 21( b)).

After the removal of the transfer material W10, surface portions of thethird material W9 where the micropatterns are formed and other surfaceportions of the third material W9, the other surface portions beingconnected to the above portions, (for example, approximately the entiresurface of the third material W9) are covered with a thin film of thetransfer material W10.

Thereafter, a transfer micropattern is transferred onto the transfermaterial W10 by pressing the mold M1 against other portions continuouslyconnected to the portions having the micropatterns formed therein shownin FIG. 21( b), the other portions being a part of the substrate W1having the thin film of the transfer material W10 provided on itssurface (see FIG. 21( e)).

By etching after the transfer of the micropattern onto the transfermaterial W10, micropatterns which correspond to the transfermicropattern on the mold M1 and are continuously connected to themicropatterns shown in FIG. 21( b) are formed only on the third materialW9. Thereafter, the transfer material W10 is removed (see FIG. 21( d)).

According to the micropattern forming method according to the thirdembodiment, in each micropattern forming step, the second material W8 inthe substrate W1 is not etched in the formation of the micropatterns onthe third material W9 by etching. Therefore, concave portions of themicropattern formed on the substrate W1 (the third material W9) have auniform depth. Thus, the micropattern having a more accurate form can beformed on the substrate W1.

Note that the micropattern forming method according to the thirdembodiment is an example of a micropattern forming method forcontinuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold. Themicropattern forming method includes: a covering step of covering asurface of a third material in the substrate with a thin film of atransfer material, the substrate being formed by stacking a firstmaterial, a thin-film-like second material and a thin-film-like thirdmaterial; a transfer step of transferring the transfer micropatterns atpredetermined intervals in a plurality of spots on the transfer materialformed in the covering step by pressing the mold more than once againsta part of the substrate having the thin film of the transfer materialprovided on its surface by the covering step; a micropattern formingstep of forming the micropatterns at predetermined intervals in aplurality of spots only on the third material by etching after thetransfer of the micropatterns by the transfer step, the micropatternseach corresponding to the transfer micropattern on the mold; and aremoval step of removing the transfer material provided in the coveringstep after the formation of the micropatterns by the micropatternforming step. The micropatterns each corresponding to the transfermicropattern formed on the mold are continuously formed on the substrateby repeating a cycle of the covering step, the transfer step, themicropattern forming step and the removal step in this order formultiple times while accordingly changing positions to formmicropatterns in the transfer step and the micropattern forming step.

Fourth Embodiment

FIGS. 22 and 23 are views schematically showing steps of a micropatternforming method according to a fourth embodiment of the presentinvention.

The micropattern forming method according to the fourth embodiment isdifferent from the micropattern forming method according to the firstembodiment in the following points. In the micropattern forming methodaccording to the fourth embodiment, a transfer material W2 is providedon a substrate W1, and a transfer micropattern on a mold M1 istransferred onto the transfer material W2. Thereafter, covering membersW21 is provided at bottoms of concave portions in a micropattern formedby the above transfer and then the transfer material W2 is removed.These steps are repeated more than once, and then the substrate W1 isetched in a state where the covering members W21 are left on thesubstrate W1. Thereby, the transfer micropattern is formed on thesubstrate W1. The other points are approximately the same as themicropattern forming method according to the first embodiment.

To be more specific, in the micropattern forming method according to thefourth embodiment, first, a surface of the substrate W1 is covered witha film of the transfer material W2. Thereafter, a transfer micropatternis transferred onto the transfer material W2 by pressing the mold M1against the transfer material W2 (see FIG. 22( a)). In this state, thereis a case where thin films of the transfer material W2 remain at bottomsof concave portions in the transfer material W2. In this case, theremaining films are removed, for example, by O2 aching to expose thesurface of the substrate W1 at the bottoms of the concave portions.

Subsequently, the covering members W21 are provided in portions (thebottoms of the concave portions in the transfer micropattern) where thesubstrate W1 is exposed by the transfer of the transfer micropattern.The covering members W21 are formed of members (for example, metalmembers) of a different kind from the transfer material W2. Moreover,the transfer material W21 is provided by plating or deposition (physicaldeposition such as vacuum deposition or chemical deposition may beused). The covering members W21 cover the bottoms of the concaveportions in the transfer micropattern, the bottoms being the portionswhere the substrate W1 is exposed.

Incidentally, in the provision of the covering members W21, the coveringmembers W21 may cover only the portions (the bottoms of the concaveportions in the transfer micropattern) where the substrate W1 is exposedby the transfer of the transfer micropattern. However, in some actualcases, not only the covering members W21 are provided so as to fill allthe concave portions in the transfer micropattern, but a surface W2 bthat is not the concave portions in the transfer micropattern may alsobe covered with the covering members W21. To leave the covering membersW21 only in the concave portions in the transfer micropattern, thecovering members W21 covering the surface W2 b are cut off, for example,by machining such as cutting. Thus; as shown in FIG. 22( b), the surfaceW2 b of the transfer material W2 is exposed and the concave portions inthe transfer micropattern are filled with the metal members W21.

After the portions where the substrate W1 is exposed are covered withthe covering members W21 as shown in FIG. 22( b), the transfer materialW2 is removed. This removal is performed by use of, for example, asolvent which dissolves the transfer material W2 without dissolving thesubstrate W1 and the covering members W21.

Subsequently, surface portion of the substrate W1 (surface portion ofthe substrate W1 where the covering members W21 do not exist and thesubstrate W1 is exposed since only the covering members W21 are left ona flat surface of the substrate W1 by removal of the transfer materialW2 and the covering members W21 form a micropattern) are covered with afilm of the transfer material W2. A thickness of the transfer materialW2 in this state is approximately equal to a thickness of the transfermaterial W2 provided in the first time (see FIG. 22( a)) and a thicknessof the covering members W21 in FIG. 22( b).

Thereafter, a transfer micropattern is transferred onto the transfermaterial W2 by pressing the mold M1 against the substrate W1 having thefilm of the transfer material W2 provided on its surface (see FIG. 22(c)). As described above, also in this state, there is a case where thinfilms of the transfer material W2 remain at bottoms of concave portionsin the transfer material W2. In this case, the remaining films areremoved, for example, by O2 ashing to expose the surface of thesubstrate W1 at the bottoms of the concave portions.

Subsequently, as in the above case, portions where the substrate W1 isexposed by the transfer of the transfer micropattern are covered withthe covering members W21 (see FIG. 23( d)), and then the transfermaterial W2 is removed. Note that, in the state where the transfermaterial W2 is removed, a transfer micropattern of the covering members(provided by each covering step) W21 corresponding to the transfermicropattern on the mold M1 is formed on the flat surface of thesubstrate W1.

After the removal of the transfer material W2, a micropatterncorresponding to the transfer micropattern on the mold M1 is formed onthe surface of the substrate W1 by etching using the covering membersW21 as a resist film (protective film) (see FIG. 23( e)). After theformation of the micropattern, the covering members W21 are removed (seeFIG. 23( f)).

Accordingly, the micropatterns each corresponding to the transfermicropattern formed on the mold M1 are continuously formed on thesubstrate W1.

Note that the micropattern forming method according to the fourthembodiment is an example of a micropattern forming method forcontinuously forming micropatterns on a substrate, the micropatternseach corresponding to a transfer micropattern formed on a mold. Themicropattern forming method includes: a covering step of covering asurface of the substrate with a film of a transfer material; a transferstep of transferring the transfer micropatterns at predeterminedintervals in a plurality of spots on the transfer material formed in thecovering step by pressing the mold more than once against the substratehaving the film of the transfer material provided on its surface by thecovering step; a provision step of providing a covering member in aportion where the substrate is exposed by the transfer of the transfermicropattern in the transfer step; and a removal step of removing thetransfer material provided in the covering step after covering theportion where the substrate is exposed with the covering members in theprovision step, the micropattern corresponding to the transfermicropattern on the mold is formed on the substrate by etching using thecovering members W as a resist film after repeating the respective stepsfor multiple cycles in the order of the covering step, the transferstep, the provision step and the removal step. The micropatterns eachcorresponding to the transfer micropattern formed on the mold arecontinuously formed on the substrate by removing the covering membersprovided in the provision step after the formation of the micropattern.

The present invention is not limited to the above description of theembodiments of the invention but can be implemented in various othermodes by making appropriate changes thereto.

Note that the entire contents of Japanese Patent Applications Nos.2007-59016 (filed: Mar. 8, 2007) and 2008-8011 (filed: Jan. 17, 2008)are incorporated herein by reference.

1. A micropattern forming method for continuously forming micropatternson a substrate, the micropatterns each corresponding to a transfermicropattern formed on a mold, the micropattern forming methodcomprising: a first covering step of covering a surface of the substratewith a film of a transfer material; a first transfer step oftransferring the transfer micropattern onto the transfer material formedin the first covering step by pressing the mold against the substratehaving the film of the transfer material provided on its surface by thefirst covering step; a first provision step of providing a coveringmember in a portion where the substrate is exposed by the transfer ofthe transfer micropattern in the first transfer step; a first removalstep of removing the transfer material provided in the first coveringstep after covering the portion where the substrate is exposed with thecovering member in the first provision step; a second covering step ofcovering surface portions of the substrate with a film of the transfermaterial after the removal of the transfer material in the first removalstep; a second transfer step of transferring the transfer micropatternonto the transfer material formed in the second covering step bypressing a mold against the substrate having the film of the transfermaterial provided on its surface by the second covering step; a secondprovision step of covering a portion where the substrate is exposed bythe transfer of the transfer micropattern in the second transfer stepwith a covering member; a second removal step of removing the transfermaterial provided in the second covering step after covering the portionwhere the substrate is exposed with the covering member in the secondprovision step; a micropattern forming step of forming a micropattern onthe substrate by etching after the removal of the transfer material bythe second removal step, the micropattern corresponding to the transfermicropattern on the mold; and a third removal step of removing thecovering members provided in the first and second provision steps afterthe formation of the micropattern by the micropattern forming step. 2.The micropattern forming method according to claim 1, furthercomprising: a positional relationship detecting step of detecting apositional relationship between the micropattern formed in the firstmicropattern forming stop and the transfer micropattern formed on themold after the micropattern is formed in the first micropattern formingstep and before the transfer is performed in the second transfer step;and a correction step of correcting a position of the mold relative tothe substrate on the basis of a result of the detection in thepositional relationship detecting step, so that the transfermicropattern to be formed in the second micropattern forming step isaccurately connected to the micropattern formed in the firstmicropattern forming step.
 3. The micropattern forming method accordingto claim 2, wherein the correction step is a step of performing thecorrection by compensating a change in shape of the mold to an accurateshape by using an actuator.
 4. The micropattern forming method accordingto claim 2, wherein by the first transfer step and the firstmicropattern forming step, micropatterns are formed in a first portionof the transfer material and in a second portion away from the firstportion by a predetermined distance; by the second transfer step and thesecond micropattern forming step, a micropattern is formed in a thirdportion connecting the first and second portions; and the positionalrelationship detecting step is a step of detecting a positionalrelationship between the micropattern formed in the first micropatternforming step and the transfer micropattern formed on the mold bydetecting a relative positional deviation amount of the transfermicropattern on the mold at a boundary between the first portion and thetransfer micropattern formed on the mold and by detecting a relativepositional deviation amount of the transfer micropattern on the mold ata boundary between the second portion and the transfer micropatternformed on the mold.
 5. The micropattern forming method according toclaim 4, wherein a portion of the mold having the transfer micropatternformed therein is formed to have a rectangular planar shape; byarranging the first portion, the third portion and the second portion ina straight line, a micropattern is formed within a rectangular area; thepositional relationship detecting step is a step of detecting, on oneside in a width direction of the rectangular micropattern, a positionaldeviation amount of the transfer micropattern on the mold relative tothe first portion at the boundary between the first portion and thetransfer micropattern formed on the mold and a positional deviationamount of the transfer micropattern on the mold relative to the secondportion at the boundary between the second portion and the transfermicropattern formed on the mold, and of detecting, on the other side inthe width direction of the rectangular micropattern, a positionaldeviation amount of the transfer micropattern on the mold relative tothe first portion at the boundary between the first portion and thetransfer micropattern formed on the mold; and the correction step is astep of performing the correction by compensating the dimension of themold in the width direction by changing an elastic deformation amount ofthe mold in the width direction of the rectangular micropattern by usingan actuator on the basis of the positional deviation amount on the otherside in the width direction.
 6. The micropattern forming methodaccording to claim 1, further comprising: a step of forming a die by useof a substrate including a micropattern formed by using the micropatternforming method, in which a portion of the mold having the micropatternformed therein is formed to be long by performing the transfer steps andthe micropattern forming steps in alignment with each other: and a thirdtransfer step of transferring the micropattern on the die onto ato-be-molded object, wherein the portion of the die having themicropattern formed therein is formed into a convex surface shape formedby using a part of a lateral surface of a cylinder in such a manner thata longitudinal direction of the portion is set as a circumferentialdirection of the cylinder; or the portion of the die having themicropattern formed therein is formed into a convex surface shape formedby using a part of a lateral surface Of an elliptic cylinder in such amanner that the longitudinal direction of the portion is set as acircumferential direction of the elliptic cylinder; and the transfer isperformed while moving a linear pressing portion of the convex surfaceagainst the to-be-molded object from one end to the other end of theconvex surface.
 7. The micropattern forming method according to claim 6,wherein after the third transfer is performed, the die is moved in awidth direction of the micropattern on the die relative to theto-be-molded object; a die is manufactured by electroforming by use of asubstrate including a micropattern formed by using the micropatternforming method; and by a fourth transfer step of transferring themicropattern on the die manufactured by electroforming onto ato-be-molded object, the micropattern on the die is transferred onto theto-be-molded object in a manner connected in the width direction.
 8. Themicropattern:forming method according to claim 6 for continuouslyforming a micropattern on the to-be-molded object, the micropatterncorresponding to the micropattern formed on the die, the method furthercomprising: a third covering step of covering a surface of theto-be-molded object with a film of a transfer material; a fourthtransfer step of transferring the transfer micropattern onto thetransfer material formed in the third covering step by pressing the dieagainst the to-be-molded object having the film of the transfer materialprovided on its surface by the third covering step; a third micropatternforming step of forming a micropattern on the to-be-molded object byetching after the transfer of the micropattern by the fourth transferstep, the micropattern corresponding to the transfer micropattern on thedie; a fourth removal step of removing the transfer material provided inthe third covering step after the formation of the micropattern by thethird micropattern forming step; a fourth covering step of covering thesurface of the to-be-molded object with a film of the transfer materialafter the removal of the transfer material in the fourth removal step; afifth transfer step of transferring the transfer micropattern onto thetransfer material formed in the fourth covering step by pressing the dieagainst the to-be-molded object having the film of the transfer materialprovided on its surface by the fourth covering step; a fourthmicropattern forming step of forming a micropattern on the to-be-moldedobject by etching after the transfer of the micropattern by the fifthtransfer step, the micropattern corresponding to the transfermicropattern on the mold; and a fifth removal step of removing thetransfer material provided in the fourth covering step after theformation of the micropattern by the fourth micropattern forming step.9. The micropattern forming method according to claim 8, wherein in eachtransfer step, the portion of the die having the micropattern formedtherein is formed into a convex surface shape formed by using a part ofa lateral surface of a cylinder in such a manner that a longitudinaldirection of the portion is set as a circumferential direction of thecylinder; or the portion of the die having the micropattern formedtherein is formed into a convex surface shape formed by using a part ofa lateral surface of an elliptic cylinder in such a manner that thelongitudinal direction of the portion is set as a circumferentialdirection of the elliptic cylinder; and the transfer is performed whilemoving a linear pressing portion of the convex surface against theto-be-molded object from one end to the other end of the convex surface.10. The micropattern forming method according to claim 1, whereinmicropatterns are formed in portions of the substrate corresponding toportions of one color of a checkered pattern in the first transfer stepand the first micropattern forming step, and micropatterns are formed inportions of the substrate corresponding to portions of the other colorof the checkered pattern in the second transfer step and the secondmicropattern forming step.
 11. A die manufactured by electroforming andby using a substrate including a micropattern, the micropattern formedby using a forming method including: a first covering step of covering asurface of the substrate with a film of a transfer material; a firsttransfer step of transferring the transfer micropattern onto thetransfer material formed in the first covering step by pressing the moldagainst the substrate having the film of the transfer material providedon its surface by the first covering step; a first provision step ofproviding a covering member in a portion where the substrate is exposedby the transfer of the transfer micropattern in the first transfer step;a first removal step of removing the transfer material provided in thefirst covering step after covering the portion where the substrate isexposed with the covering member in the first provision step; a secondcovering step of covering surface portions of the substrate with a filmof the transfer material after the removal of the transfer material inthe first removal step; a second transfer step of transferring thetransfer micropattern onto the transfer material formed in the secondcovering step by pressing a mold against the substrate having the filmof the transfer material provided on its surface by the second coveringstep; a second provision step of covering a portion where the substrateis exposed by the transfer of the transfer micropattern in the secondtransfer step with a covering member; a second removal step of removingthe transfer material provided in the second covering step aftercovering the portion where the substrate is exposed with the coveringmember in the second provision step; a micropattern forming step offorming a micropattern on the substrate by etching after the removal ofthe transfer material in the second removal step, the micropatterncorresponding to the transfer micropattern on the mold; and a thirdremoval step of removing the covering members provided in the first andsecond provision steps after the formation of the micropattern by themicropattern forming step.
 12. A die long formed of a substrateincluding a micropattern, a portion of the die, in which themicropattern is formed, being formed by the performing transfer stepsand the micropattern forming steps in alignment with each other, themicropattern being formed by use of a forming method including: a firstcovering step of covering a surface of the substrate with a film of atransfer material; a first transfer step of transferring the transfermicropattern onto the transfer material formed in the first coveringstep by pressing the mold against the substrate having the film of thetransfer material provided on its surface by the first covering step; afirst provision step of providing a covering member in a portion wherethe substrate is exposed by the transfer of the transfer micropattern inthe first transfer step; a first removal step of removing the transfermaterial provided in the first covering step after covering the portionwhere the substrate is exposed with the covering member in the firstprovision step; a second covering step of covering surface portions ofthe substrate with a film of the transfer material after the removal ofthe transfer material in the first removal step; a second transfer stepof transferring the transfer micropattern onto the transfer materialformed in the second covering step by pressing a mold against thesubstrate having the film of the transfer material provided on itssurface by the second covering step; a second provision step of coveringa portion where the substrate is exposed by the transfer of the transfermicropattern in the second transfer step with a covering member; asecond removal step of removing the transfer material provided in thesecond covering step after covering the portion where the substrate isexposed with the covering member in the second provision step; amicropattern forming step of forming a micropattern on the substrate byetching after the removal of the transfer material by the second removalstep, the micropattern corresponding to the transfer micropattern on themold; and a third removal step of removing the covering members providedin the first and second provision steps after the formation of themicropattern by the micropattern forming step.
 13. A micropatternforming method for continuously forming micropatterns on a substrate,the micropatterns each corresponding to a transfer micropattern formedon a mold, the micropattern forming method comprising: a covering stepof covering a surface of the substrate with a film of a transfermaterial; a transfer step of transferring the transfer micropatterns atpredetermined intervals in a plurality of spots on the transfer materialformed in the covering step by pressing the mold more than once againstthe substrate having the film of the transfer material provided on itssurface by the covering step; a provision step of providing a coveringmember in a portion where the substrate is exposed by the transfer ofthe transfer micropattern in the transfer step; and a removal step ofremoving the transfer material provided in the covering step aftercovering the portion where the substrate is exposed with the coveringmember in the provision step, wherein the micropatterns eachcorresponding to the transfer micropattern on the mold are continuouslyformed on the substrate: by forming the micropatterns each correspondingto the transfer micropattern on the mold on the substrate by etchingafter repeating a cycle of the covering step, the transfer step, theprovision step, the micropattern forming step and the removal step inthis order for multiple time; and by removing the covering membersprovided in the provision step after the formations of themicropatterns.